G60N04K

Quantity	excl. VAT	VAT incl.
1 - 4	2.16$	2.16$
5 - 9	2.06$	2.06$
10 - 24	1.95$	1.95$
25 - 49	1.84$	1.84$
50 - 70	1.80$	1.80$

Quantity	U.P
1 - 4	2.16$	2.16$
5 - 9	2.06$	2.06$
10 - 24	1.95$	1.95$
25 - 49	1.84$	1.84$
50 - 70	1.80$	1.80$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 70

Set of 1

G60N04K. C(in): 1800pF. Cost): 280pF. Channel type: N. Conditioning: roll. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Id(imp): 200A. ID (T=25°C): 60A. Idss (max): 1uA. IDss (min): n/a. Marking on the case: G60N04K. Pd (Power Dissipation, Max): 65W. On-resistance Rds On: 5.3m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 6.5 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.1V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Function: power switching, DC/DC converters. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 02:25.

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!