Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 7.96$ | 7.96$ |
2 - 2 | 7.56$ | 7.56$ |
3 - 4 | 7.16$ | 7.16$ |
5 - 9 | 6.76$ | 6.76$ |
10 - 15 | 6.60$ | 6.60$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 7.96$ | 7.96$ |
2 - 2 | 7.56$ | 7.56$ |
3 - 4 | 7.16$ | 7.16$ |
5 - 9 | 6.76$ | 6.76$ |
10 - 15 | 6.60$ | 6.60$ |
GT35J321. Channel type: N. Function: High Power Switching Applications. Collector current: 37A. Ic(pulse): 100A. Ic(T=100°C): 18A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.51 ns. Td(on): 0.33 ns. Housing: TO-3P( N )IS. Housing (according to data sheet): TO-3P. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 25V. Number of terminals: 3. Spec info: insulated gate bipolar transistor (IGBT). CE diode: yes. Germanium diode: no. Quantity in stock updated on 12/01/2025, 02:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.