Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.07$ | 2.07$ |
5 - 9 | 1.96$ | 1.96$ |
10 - 24 | 1.86$ | 1.86$ |
25 - 49 | 1.76$ | 1.76$ |
50 - 90 | 1.72$ | 1.72$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.07$ | 2.07$ |
5 - 9 | 1.96$ | 1.96$ |
10 - 24 | 1.86$ | 1.86$ |
25 - 49 | 1.76$ | 1.76$ |
50 - 90 | 1.72$ | 1.72$ |
CSD17313Q2T. C(in): 260pF. Cost): 140pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 57A. ID (T=25°C): 5A. Idss (max): 1uA. Number of terminals: 6. Temperature: +150°C. Pd (Power Dissipation, Max): 17W. On-resistance Rds On: 0.024...0.042 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 4.2 ns. Td(on): 2.8 ns. Technology: N-Channel NexFET™ Power MOSFET. Housing: WSON6. Housing (according to data sheet): 2mm × 2mm plastic case. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.9V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 11/01/2025, 16:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.