BUZ77B

BUZ77B. C(in): 460pF. Cost): 55pF. Channel type: N. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Function: BSIPMOS® Power Transistor, Enhancement mode. Id(imp): 11.5A. ID (T=100°C): 1.7A. ID (T=25°C): 2.9A. Idss (max): 100uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 3 Ohms. Td(off): 50 ns. Td(on): 8 ns. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -50...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Quantity per case: 1. Quantity in stock updated on 11/01/2025, 16:25.