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Semiconductors Transistors

CEB6030L

CEB6030L
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.06$ 1.06$
5 - 9 1.00$ 1.00$
10 - 24 0.95$ 0.95$
25 - 49 0.90$ 0.90$
50 - 99 0.88$ 0.88$
100 - 249 0.86$ 0.86$
250 - 718 0.81$ 0.81$
Quantity U.P
1 - 4 1.06$ 1.06$
5 - 9 1.00$ 1.00$
10 - 24 0.95$ 0.95$
25 - 49 0.90$ 0.90$
50 - 99 0.88$ 0.88$
100 - 249 0.86$ 0.86$
250 - 718 0.81$ 0.81$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 718
Set of 1

CEB6030L. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.011 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Quantity in stock updated on 27/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 65
NDB6030L

NDB6030L

Channel type: N. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ...
NDB6030L
Channel type: N. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.011 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Quantity per case: 1
NDB6030L
Channel type: N. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.011 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Quantity per case: 1
Set of 1
1.72$ VAT incl.
(1.72$ excl. VAT)
1.72$
Quantity in stock : 285
SPB56N03L

SPB56N03L

Channel type: N. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. ID (T=25...
SPB56N03L
Channel type: N. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. ID (T=25°C): 56A. Idss (max): 56A. Marking on the case: 56N03L. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 30 v. Quantity per case: 1
SPB56N03L
Channel type: N. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. ID (T=25°C): 56A. Idss (max): 56A. Marking on the case: 56N03L. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 30 v. Quantity per case: 1
Set of 1
1.22$ VAT incl.
(1.22$ excl. VAT)
1.22$

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Out of stock
2SD1762

2SD1762

Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Collector current: 3A. Pd (Power ...
2SD1762
[LONGDESCRIPTION]
2SD1762
[LONGDESCRIPTION]
[MODCATID]
[LOT]
2.39$ VAT incl.
(2.39$ excl. VAT)
2.39$

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