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BUZ74

BUZ74
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.66$ 1.66$
Quantity U.P
1 - 4 1.66$ 1.66$
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Quantity in stock : 4
Set of 1

BUZ74. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss (max): 2.4A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 3 Ohms. Technology: V-MOS. Voltage Vds(max): 500V. Quantity per case: 1. Quantity in stock updated on 11/01/2025, 16:25.

Equivalent products :

Quantity in stock : 112
IRF820

IRF820

Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of tra...
IRF820
Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.6A. ID (T=25°C): 2.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 8 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. C(in): 360pF. G-S Protection: no
IRF820
Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.6A. ID (T=25°C): 2.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 8 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. C(in): 360pF. G-S Protection: no
Set of 1
1.32$ VAT incl.
(1.32$ excl. VAT)
1.32$

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IRF830

IRF830

C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ...
IRF830
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IRF710

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C(in): 170pF. Cost): 34pF. Channel type: N. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Fu...
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IRF740

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C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. ...
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IRFZ44N

IRFZ44N

C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
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MOR2WS-8K2

MOR2WS-8K2

Resistance: 8.2k Ohms. Power: 2W. Resistor type: Metal layer. Temperature stability: 300ppm/°C. Dim...
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MF0207-8K06

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Resistance: 8.06k Ohms. Power: 0.6W. Tolerance: 1%. Series: MF0207. Dimensions: 6x2.3mm. Temperature...
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TLP627

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CTR: 1000...4000%. Diode IF: 60mA. Diode Power: 0.1W. Diode threshold voltage: 1.15V. Collector curr...
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TNY278PN

TNY278PN

RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to dat...
TNY278PN
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IRFIZ44N

IRFIZ44N

Channel type: N. On-resistance Rds On: 0.024 Ohms. Quantity per case: 1. Type of transistor: MOSFET....
IRFIZ44N
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CERM-200K-10A25

CERM-200K-10A25

Resistance: 200k Ohms. Number of turns: 25. Temperature stability: 100ppm/°C. Characteristic: Linea...
CERM-200K-10A25
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