Transistors

Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Collector current: 50mA. Ic(pulse): 100mA. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BF420. CE diode: yes

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Collector current: 50mA. Ic(pulse): 100mA. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) BF423. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Collector current: 0.05A. Ic(pulse): 100A. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BF422

RoHS: no. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF450. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 25mA. Cutoff frequency ft [MHz]: 350 MHz. Maximum dissipation Ptot [W]: 0.3W. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92 ( SOT-54 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 40V. Collector/emitter voltage Vceo: 40V. Vebo: 4 v. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Spec info: feedback capacitance--0.45pF

Semiconductor material: silicon. FT: 350 MHz. Function: HF and IF stages in radio receivers. Max hFE gain: 90. Minimum hFE gain: 30. Collector current: 25mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 40V. Collector/emitter voltage Vceo: 40V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 90 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Quantity per case: 1

Cost): 5.5pF. Semiconductor material: silicon. FT: 90 MHz. Function: VID-L. Minimum hFE gain: 25. Collector current: 100mA. Ic(pulse): 300mA. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Collector current: 0.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 250V. Quantity per case: 1

Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Collector current: 0.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 300V. Quantity per case: 1

Semiconductor material: silicon. FT: 60 MHz. Collector current: 0.03A. Pd (Power Dissipation, Max): 2W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Spec info: complementary transistor (pair) BF471. Housing: TO-126 (TO-225, SOT-32)

Semiconductor material: silicon. Collector current: 50mA. Type of transistor: PNP. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1

Semiconductor material: silicon. Function: VHF/UHF-V. Collector current: 50mA. Type of transistor: PNP. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 70 MHz. Collector current: 0.05A. Pd (Power Dissipation, Max): 0.83W. Type of transistor: NPN. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Spec info: TO-93

Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -250V. Collector current: -0.5A. Power: 0.8W. Housing: TO-92

Cost): 1.6pF. Semiconductor material: silicon. FT: 50 MHz. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 350V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 350V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 550 MHz. Function: VHF-V. Minimum hFE gain: 25. Collector current: 30mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 35V. Collector/emitter voltage Vceo: 40V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1

C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 6.5mA. IDss (min): 2mA. IGF: 10mA. Marking on the case: 20*. Temperature: +150°C. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 2.2V. Gate/source voltage (off) min.: 0.4V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 15mA. IDss (min): 6mA. IGF: 10mA. Marking on the case: 21*. Temperature: +150°C. Pd (Power Dissipation, Max): 6mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 25mA. IDss (min): 12mA. IGF: 10mA. Marking on the case: 22*. Temperature: +150°C. Pd (Power Dissipation, Max): 12mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 7.8V. Gate/source voltage (off) min.: 3.2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Quantity per case: 1

Semiconductor material: silicon. FT: 700 MHz. Function: VHF Oscillator. Minimum hFE gain: 30. Collector current: 25mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 40V. Collector/emitter voltage Vceo: 30 v. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1

RoHS: no. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DA. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 50mA. Cutoff frequency ft [MHz]: 60 MHz. Maximum dissipation Ptot [W]: 1.1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

RoHS: no. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DB. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 50mA. Cutoff frequency ft [MHz]: 60 MHz. Maximum dissipation Ptot [W]: 1.1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

Semiconductor material: silicon. FT: 900 MHz. Function: UHF-M/O. Collector current: 0.03A. Assembly/installation: surface-mounted component (SMD). Housing: SOT-39. Housing (according to data sheet): SOT-39. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Quantity per case: 1

Semiconductor material: silicon. FT: 45 MHz. Collector current: 0.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 300V. Quantity per case: 1