Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.23$ | 1.23$ |
5 - 9 | 1.17$ | 1.17$ |
10 - 24 | 1.11$ | 1.11$ |
25 - 49 | 1.05$ | 1.05$ |
50 - 71 | 1.02$ | 1.02$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.23$ | 1.23$ |
5 - 9 | 1.17$ | 1.17$ |
10 - 24 | 1.11$ | 1.11$ |
25 - 49 | 1.05$ | 1.05$ |
50 - 71 | 1.02$ | 1.02$ |
BF459. Cost): 5.5pF. Semiconductor material: silicon. FT: 90 MHz. Function: VID-L. Minimum hFE gain: 25. Collector current: 100mA. Ic(pulse): 300mA. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 01:25.
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