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Semiconductors Transistors

BF450

BF450
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.21$ 0.21$
50 - 99 0.20$ 0.20$
100 - 154 0.19$ 0.19$
Quantity U.P
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.21$ 0.21$
50 - 99 0.20$ 0.20$
100 - 154 0.19$ 0.19$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 154
Set of 1

BF450. RoHS: no. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF450. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 25mA. Cutoff frequency ft [MHz]: 350 MHz. Maximum dissipation Ptot [W]: 0.3W. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92 ( SOT-54 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 40V. Collector/emitter voltage Vceo: 40V. Vebo: 4 v. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Spec info: feedback capacitance--0.45pF. Quantity in stock updated on 11/01/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 192
BF451

BF451

Semiconductor material: silicon. FT: 350 MHz. Function: HF and IF stages in radio receivers. Max hFE...
BF451
Semiconductor material: silicon. FT: 350 MHz. Function: HF and IF stages in radio receivers. Max hFE gain: 90. Minimum hFE gain: 30. Collector current: 25mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 40V. Collector/emitter voltage Vceo: 40V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BF451
Semiconductor material: silicon. FT: 350 MHz. Function: HF and IF stages in radio receivers. Max hFE gain: 90. Minimum hFE gain: 30. Collector current: 25mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 40V. Collector/emitter voltage Vceo: 40V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$

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Quantity in stock : 4
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MD1803DFX

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V-0050603F

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