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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, TO-92, TO-92, 250V, TO92, -250V - BF423

NPN-Transistor, TO-92, TO-92, 250V, TO92, -250V - BF423
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Quantity excl. VAT VAT incl.
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.21$ 0.21$
50 - 99 0.20$ 0.20$
100 - 249 0.19$ 0.19$
250 - 499 0.18$ 0.18$
500 - 949 0.17$ 0.17$
Quantity U.P
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.21$ 0.21$
50 - 99 0.20$ 0.20$
100 - 249 0.19$ 0.19$
250 - 499 0.18$ 0.18$
500 - 949 0.17$ 0.17$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 949
Set of 1

NPN-Transistor, TO-92, TO-92, 250V, TO92, -250V - BF423. NPN-Transistor, TO-92, TO-92, 250V, TO92, -250V. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 250V. Housing: TO92. Collector-Emitter Voltage VCEO: -250V. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BF422. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Type: amplifier. Polarity: PNP. Power: 0.83W. Collector-Base Voltage VCBO: -250V. Mounting Type: PCB through-hole mounting. Bandwidth MHz: 60MHz. DC Collector/Base Gain hFE min.: 50. Current Max 1: -0.05A. Information: 50. Series: BF423. MSL: 100A. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 05/07/2025, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 20777
BF421

BF421

NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (accordin...
BF421
NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
BF421
NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
Set of 10
1.21$ VAT incl.
(1.21$ excl. VAT)
1.21$

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BF422

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