Transistors

Semiconductor material: silicon. Function: UHF-V M/O. Collector current: 25mA. Pd (Power Dissipation, Max): 0.36W. Type of transistor: NPN. Collector/emitter voltage Vceo: 15V. Quantity per case: 1

Darlington transistor?: no. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: 1V. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Spec info: screen printing/SMD code

Cost): 1.6pF. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: 1W. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.8V. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Spec info: screen printing/SMD code 1W. BE diode: no. CE diode: no

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-202. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 1.8W

Semiconductor material: silicon. FT: 90MHz. Collector current: 50mA. Id(imp): 300mA. Pd (Power Dissipation, Max): 7W. RoHS: no. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 275V. Vebo: 5V. Quantity per case: 1

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 25mA. Maximum dissipation Ptot [W]: 0.25W

Semiconductor material: silicon. FT: 700 MHz. Function: VHF TV-IF. Max hFE gain: 40. Minimum hFE gain: 35. Collector current: 100mA. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 20V. Vebo: 3V. Number of terminals: 3. Quantity per case: 1

Function: UHF-V. Quantity per case: 1

Semiconductor material: silicon. FT: 900 MHz. Function: UHF-M/O. Collector current: 30mA. Pd (Power Dissipation, Max): 0.15W. Assembly/installation: PCB through-hole mounting. Housing: TO-50. Housing (according to data sheet): TO-50. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Type of transistor: Power Transistor. Polarity: PNP. Applications: RF POWER. Max frequency: 900 MHz. Housing: SOT-37. Quantity per case: 1

Semiconductor material: silicon. Function: UHF-V. Collector current: 30mA. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP. Collector/emitter voltage Vceo: 20V. Quantity per case: 1

C(in): 3pF. Cost): 1.2pF. Channel type: N. Type of transistor: MOSFET. Function: VHF and UHF applications with 12V supply voltage. ID (T=25°C): 30mA. Idss (max): 18mA. IDss (min): 2mA. Marking on the case: M90. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Technology: Silicon N-channel dual-gate MOS-FET. Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 18V. Number of terminals: 4. Quantity per case: 1. Drain-source protection : no. G-S Protection: yes

C(in): 2.3pF. Cost): 0.8pF. Function: N MOSFET transistor. ID (T=25°C): 30mA. Idss (max): 4mA. IDss (min): 2mA. Marking on the case: MH. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 20V. Number of terminals: 4. Quantity per case: 1. Note: screen printing/SMD code MH

C(in): 2.1pF. Channel type: N. Type of transistor: MOSFET. Function: VHF and UHF applications with 12V supply voltage. ID (T=25°C): 30mA. Idss (max): 15mA. IDss (min): 5mA. Marking on the case: MOS. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Technology: Silicon N-channel dual-gate MOS-FET. Housing: SOT-143. Housing (according to data sheet): SOT-143. Operating temperature: -55...+150°C. Voltage Vds(max): 12V. Number of terminals: 4. Quantity per case: 1. Cost): 1.1pF. Drain-source protection : no. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-143B. Configuration: surface-mounted component (SMD). Number of terminals: 4. Manufacturer's marking: BF998. Drain-source voltage Uds [V]: 12V. Drain Current Id [A] @ 25°C: 30mA. Gate breakdown voltage Ugs [V]: 2V. Ciss Gate Capacitance [pF]: 2.5pF. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Semiconductor material: silicon. FT: 7GHz. Function: VHF/UHF-A 7GHz wideband transistor. Max hFE gain: 130. Minimum hFE gain: 80. Collector current: 150mA. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 25V. Collector/emitter voltage Vceo: 15V. Vebo: 2V. Number of terminals: 3. Quantity per case: 1

Cost): 0.7pF. Semiconductor material: silicon. FT: 7GHz. Function: For VHF/UHF antenna amplifier and RF communication applications. Max hFE gain: 250. Minimum hFE gain: 60. Collector current: 200mA. Temperature: +150°C. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 20V. Collector/emitter voltage Vceo: 15V. Vebo: 3V. Number of terminals: 4. Quantity per case: 1. BE diode: no. CE diode: no

C(in): 1.3pF. Cost): 0.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 8GHz. Function: UHF wideband transistor. Max hFE gain: 100. Minimum hFE gain: 60. Collector current: 50mA. Marking on the case: V3%. Pd (Power Dissipation, Max): 300mW (total 380mW). RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-143. Housing (according to data sheet): SOT-143B. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 20V. Collector/emitter voltage Vceo: 10V. Vebo: 2.5V. Number of terminals: 4. Spec info: screen printing/CMS code V3. BE diode: no. CE diode: no

C(in): 1.3pF. Cost): 0.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 8GHz. Function: UHF wideband transistor. Max hFE gain: 100. Minimum hFE gain: 60. Collector current: 50mA. Marking on the case: %MW. Pd (Power Dissipation, Max): 300mW (total 380mW). RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-143. Housing (according to data sheet): SOT-143B. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 20V. Collector/emitter voltage Vceo: 10V. Vebo: 2.5V. Number of terminals: 4. Spec info: screen printing/SMD code MW. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 60 MHz. Function: VID-L. Collector current: 0.1A. Pd (Power Dissipation, Max): 1.8W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Number of terminals: 3. Quantity per case: 1. Housing: TO-126 (TO-225, SOT-32)

RoHS: no. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BFN37. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

C(in): 0.9pF. Cost): 0.28pF. Quantity per case: 1. Semiconductor material: silicon. FT: 8GHz. Function: UHF wideband transistor. Max hFE gain: 140. Minimum hFE gain: 70. Collector current: 80mA. Marking on the case: RCs. Pd (Power Dissipation, Max): 580mW (total 380mW). RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-143. Housing (according to data sheet): SOT-143. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 20V. Collector/emitter voltage Vceo: 12V. Vebo: 2V. Number of terminals: 4. Spec info: screen printing/SMD code RCs. BE diode: no. CE diode: no

Semiconductor material: silicon. Function: 'Hi-res'. Collector current: 0.3A. Pd (Power Dissipation, Max): 3W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: complementary transistor (pair) BFQ252. Note: Tc.=115°C

Semiconductor material: silicon. Function: UHF-A. Collector current: 0.15A. Type of transistor: NPN. Collector/emitter voltage Vceo: 25V. Quantity per case: 1

Semiconductor material: silicon. FT: 175 MHz. Collector current: 1.25A. Pd (Power Dissipation, Max): 4W. Type of transistor: NPN. Collector/emitter voltage Vceo: 36V. Quantity per case: 1

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: R7s. Collector-emitter voltage Uceo [V]: 15V. Collector current Ic [A], max.: 210mA. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: high frequency NPN transistor