Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.29$ | 0.29$ |
10 - 24 | 0.28$ | 0.28$ |
25 - 49 | 0.26$ | 0.26$ |
50 - 99 | 0.25$ | 0.25$ |
100 - 192 | 0.22$ | 0.22$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.29$ | 0.29$ |
10 - 24 | 0.28$ | 0.28$ |
25 - 49 | 0.26$ | 0.26$ |
50 - 99 | 0.25$ | 0.25$ |
100 - 192 | 0.22$ | 0.22$ |
BF451. Semiconductor material: silicon. FT: 350 MHz. Function: HF and IF stages in radio receivers. Max hFE gain: 90. Minimum hFE gain: 30. Collector current: 25mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 40V. Collector/emitter voltage Vceo: 40V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 00:25.
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