Transistors

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: M2. Drain-source voltage Uds [V]: 25V. Drain current Idss [A] @ Ug=0V: 5mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -2V @ +10V. Maximum dissipation Ptot [W]: 0.25W. Component family: N-Channel JFET Transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

C(in): 0.64pF. Cost): 0.23pF. Semiconductor material: silicon. FT: 5GHz. Function: 5GHz wideband transistor (UHF-A). Max hFE gain: 140. Minimum hFE gain: 70. Collector current: 0.045A. Pd (Power Dissipation, Max): 0.28W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 15V. Collector/emitter voltage Vceo: 20V. Vebo: 2.5V. Quantity per case: 1. BE diode: no. CE diode: no

C(in): 1.2pF. Cost): 0.6pF. Conditioning: roll. Semiconductor material: silicon. FT: 5GHz. Function: 5GHz wideband transistor (UHF-A). Max hFE gain: 135. Minimum hFE gain: 65. Collector current: 25mA. Marking on the case: P2p. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 20V. Collector/emitter voltage Vceo: 15V. Vebo: 2V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code P2P. Conditioning unit: 3000. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P2. Collector-emitter voltage Uceo [V]: 15V. Collector current Ic [A], max.: 25mA. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: high frequency NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: GFs. Collector-emitter voltage Uceo [V]: 15V. Collector current Ic [A], max.: 45mA. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.28W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: high frequency NPN transistor

Conditioning: roll. Semiconductor material: silicon. FT: 6GHz. Function: UHF-A, RF wideband amplifiers and oscillators.. Max hFE gain: 90. Minimum hFE gain: 40. Collector current: 35mA. Marking on the case: R2. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 15V. Collector/emitter voltage Vceo: 12V. Vebo: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 3000. Spec info: SMD R2. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 5GHz. Function: RF amp up to GHz range for antenna amplifier.. Max hFE gain: 150. Minimum hFE gain: 25. Collector current: 100mA. Temperature: +150°C. Pd (Power Dissipation, Max): 700W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Planar RF Transistor'. Housing: SOT-37 ( TO-50 ). Housing (according to data sheet): SOT-37 ( TO-50 ). Type of transistor: NPN. Vcbo: 20V. Collector/emitter voltage Vceo: 15V. Vebo: 2.5V. Number of terminals: 3. Quantity per case: 1

Semiconductor material: silicon. FT: 2.8GHz. Function: VHF-UHF 3GHz wideband transistor. Max hFE gain: 90. Minimum hFE gain: 25. Collector current: 25mA. Ic(pulse): 50mA. Marking on the case: E2. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Vcbo: 25V. Collector/emitter voltage Vceo: 15V. Vebo: 2.5V. Number of terminals: 3. Quantity per case: 1

Semiconductor material: silicon. FT: 450 MHz. Function: 'IF and VHF thick and thin-film circuit'. Max hFE gain: 140. Minimum hFE gain: 40. Collector current: 25mA. Ic(pulse): 25mA. Marking on the case: G1*. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 30 v. Collector/emitter voltage Vceo: 20V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code G1p, G1t, G1W

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: X1p. Collector-emitter voltage Uceo [V]: 12V. Collector current Ic [A], max.: 35mA. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: high frequency PNP transistor

Quantity per case: 1. Semiconductor material: silicon. Function: UHF-A. Collector current: 0.2A. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BFU590G. Collector-emitter voltage Uceo [V]: 24V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 8.5GHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: high frequency NPN transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High Voltage Transistor. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.83W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 140V. Spec info: complementary transistor (pair) BFV421

Quantity per case: 1. Semiconductor material: silicon. FT: 1.6GHz. Function: VHF-UHF-A. Max hFE gain: 25. Minimum hFE gain: 25. Collector current: 50mA. Ic(pulse): 100mA. Number of terminals: 4. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Housing: TO-72. Housing (according to data sheet): TO-72. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 20V. Collector/emitter voltage Vceo: 10V. Vebo: 2.5V

Housing: TO-50. Resistor B: no. BE diode: high frequency NPN transistor. BE resistor: PCB soldering (SMD). C(in): TO-50. CE diode: surface-mounted component (SMD). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3.2GHz. Function: Wide band RF amplifier up to GHz range.. Max hFE gain: 150. Minimum hFE gain: 20. Collector current: 0.025A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-50-3. Type of transistor: NPN. Vcbo: 25V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 25V. Spec info: 'Planar RF Transistor'

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF/S. Collector current: 1A. Note: b>70. Pd (Power Dissipation, Max): 0.8W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V

Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF/HF/S. Collector current: 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.75W. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Type of transistor: NPN. Collector/emitter voltage Vceo: 50V

Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF/HF/S. Collector current: 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Collector/emitter voltage Vceo: 75V

Quantity per case: 1. Semiconductor material: silicon. FT: 860 MHz. Function: UHF-L. Collector current: 1.25A. Pd (Power Dissipation, Max): 1.07W. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V

Quantity per case: 1. Semiconductor material: silicon. FT: 470 MHz. Function: UHF-L. Collector current: 1A. Pd (Power Dissipation, Max): 7.8W. Type of transistor: NPN. Collector/emitter voltage Vceo: 36V

Quantity per case: 1. Semiconductor material: silicon. FT: 860 MHz. Function: UHF-L. Collector current: 2A. Pd (Power Dissipation, Max): 2W. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V

C(in): 85pF. Cost): 20pF. Channel type: N. Diode Tff(25°C): 8 ns. Type of transistor: MOSFET. Id(imp): 2A. ID (T=25°C): 120mA. Idss (max): 30nA. Marking on the case: BS107. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7 ns. Technology: ENHANCEMENT MODE VERTICAL DMOSFET. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BS107A. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 250mA. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.35W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 6 ns. Technology: (D-S) MOSFETs. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1

C(in): 24pF. Cost): 40pF. Channel type: N. Drain-source protection : Zener diode. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 1.2A. ID (T=25°C): 0.5A. Idss (max): 10nA. IDss (min): 0.5uA. Marking on the case: BS170. Pd (Power Dissipation, Max): 0.83W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BS170G. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C