SI2308BDS-T1-GE3

Quantity	excl. VAT	VAT incl.
1 - 4	0.37$	0.37$
5 - 9	0.35$	0.35$
10 - 24	0.33$	0.33$
25 - 49	0.32$	0.32$
50 - 99	0.31$	0.31$
100 - 249	0.30$	0.30$
250 - 8783	0.29$	0.29$

Quantity	U.P
1 - 4	0.37$	0.37$
5 - 9	0.35$	0.35$
10 - 24	0.33$	0.33$
25 - 49	0.32$	0.32$
50 - 99	0.31$	0.31$
100 - 249	0.30$	0.30$
250 - 8783	0.29$	0.29$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 8783

Set of 1

SI2308BDS-T1-GE3. RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L8. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 2.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.192 Ohms @ 1.7A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 190pF. Maximum dissipation Ptot [W]: 1.66W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 18:25.

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Delivery in 2-3 days, with postal tracking!