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SI2309CDS-T1-GE3

SI2309CDS-T1-GE3
Quantity excl. VAT VAT incl.
1 - 4 1.31$ 1.31$
5 - 9 1.24$ 1.24$
10 - 24 1.17$ 1.17$
25 - 49 1.11$ 1.11$
50 - 99 1.08$ 1.08$
100 - 249 0.66$ 0.66$
250 - 6102 0.63$ 0.63$
Quantity U.P
1 - 4 1.31$ 1.31$
5 - 9 1.24$ 1.24$
10 - 24 1.17$ 1.17$
25 - 49 1.11$ 1.11$
50 - 99 1.08$ 1.08$
100 - 249 0.66$ 0.66$
250 - 6102 0.63$ 0.63$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 6102
Set of 1

SI2309CDS-T1-GE3. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N9. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.34 Ohms @ -1.25A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 210pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 19:25.

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