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SI2306BDS-T1-E3

SI2306BDS-T1-E3
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.58$ 0.58$
5 - 9 0.55$ 0.55$
10 - 24 0.52$ 0.52$
25 - 49 0.49$ 0.49$
50 - 99 0.48$ 0.48$
100 - 249 0.47$ 0.47$
250 - 7222 0.45$ 0.45$
Quantity U.P
1 - 4 0.58$ 0.58$
5 - 9 0.55$ 0.55$
10 - 24 0.52$ 0.52$
25 - 49 0.49$ 0.49$
50 - 99 0.48$ 0.48$
100 - 249 0.47$ 0.47$
250 - 7222 0.45$ 0.45$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 7222
Set of 1

SI2306BDS-T1-E3. RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: L6. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.057 Ohms @ 2.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 305pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 18:25.

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