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Semiconductors Transistors

SFS9634

SFS9634
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Quantity excl. VAT VAT incl.
1 - 4 2.35$ 2.35$
5 - 9 2.24$ 2.24$
10 - 24 2.12$ 2.12$
25 - 49 2.00$ 2.00$
50 - 99 1.95$ 1.95$
100 - 236 1.91$ 1.91$
Quantity U.P
1 - 4 2.35$ 2.35$
5 - 9 2.24$ 2.24$
10 - 24 2.12$ 2.12$
25 - 49 2.00$ 2.00$
50 - 99 1.95$ 1.95$
100 - 236 1.91$ 1.91$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 236
Set of 1

SFS9634. Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 2.6A. ID (T=25°C): 3.4A. Idss (max): 3.4A. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 1.3 Ohms. Technology: V-MOS TO220F. Voltage Vds(max): 250V. Quantity per case: 1. Note: On 13ns, Off 40ns. Quantity in stock updated on 27/12/2024, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 16
IRFI9634G

IRFI9634G

Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.6A. ID (T=25°C)...
IRFI9634G
Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.6A. ID (T=25°C): 4.1A. Idss (max): 4.1A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Function: td(on) 12ns, td(off) 34ns
IRFI9634G
Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. ID (T=100°C): 2.6A. ID (T=25°C): 4.1A. Idss (max): 4.1A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 1 Ohm. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Function: td(on) 12ns, td(off) 34ns
Set of 1
3.32$ VAT incl.
(3.32$ excl. VAT)
3.32$
Quantity in stock : 5
2SJ449

2SJ449

C(in): 1040pF. Cost): 360pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Func...
2SJ449
C(in): 1040pF. Cost): 360pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: SWITCHING, POWER MOS FET. Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 24 ns. Technology: P-CHANNEL POWER MOS FET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 4 v. Drain-source protection : yes. G-S Protection: no
2SJ449
C(in): 1040pF. Cost): 360pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: SWITCHING, POWER MOS FET. Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.55 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 24 ns. Technology: P-CHANNEL POWER MOS FET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 4 v. Drain-source protection : yes. G-S Protection: no
Set of 1
2.60$ VAT incl.
(2.60$ excl. VAT)
2.60$

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HE721A1200

HE721A1200

Switch current: 0.5A. Equivalents: R2-1A12, DIP121A7212L. Number of terminals: 8. Dimensions: 19.05x...
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RELAY-418170249024

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HE721C1200

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HE722A0610

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MOC3022

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