SGW30N60HS

Quantity	excl. VAT	VAT incl.
1 - 1	11.25$	11.25$
2 - 2	10.69$	10.69$
3 - 4	10.12$	10.12$
5 - 9	9.56$	9.56$
10 - 14	7.88$	7.88$
15 - 19	7.69$	7.69$
20 - 71	7.41$	7.41$

Quantity	U.P
1 - 1	11.25$	11.25$
2 - 2	10.69$	10.69$
3 - 4	10.12$	10.12$
5 - 9	9.56$	9.56$
10 - 14	7.88$	7.88$
15 - 19	7.69$	7.69$
20 - 71	7.41$	7.41$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 71

Set of 1

SGW30N60HS. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G30N60HS. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 41A. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 122 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 250W. Maximum collector current (A): 112A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): plastic tube. Assembly/installation: PCB through-hole mounting. Td(off): 106 ns. Td(on): 16 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Quantity in stock updated on 26/12/2024, 15:25.

Technical documentation