Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.31$ | 1.31$ |
5 - 9 | 1.24$ | 1.24$ |
10 - 24 | 1.17$ | 1.17$ |
25 - 49 | 1.11$ | 1.11$ |
50 - 99 | 1.08$ | 1.08$ |
100 - 249 | 0.66$ | 0.66$ |
250 - 2089 | 0.63$ | 0.63$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.31$ | 1.31$ |
5 - 9 | 1.24$ | 1.24$ |
10 - 24 | 1.17$ | 1.17$ |
25 - 49 | 1.11$ | 1.11$ |
50 - 99 | 1.08$ | 1.08$ |
100 - 249 | 0.66$ | 0.66$ |
250 - 2089 | 0.63$ | 0.63$ |
SI2304DDS-T1-GE3. RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P4. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 3.2A. Gate breakdown voltage Ugs [V]: 2.2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 235pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/12/2024, 19:25.
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