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Semiconductors
Transistors

Transistors

3185 products available
Products per page :
1...8910 1112...128
Out of stock
2SB1659

2SB1659

Cost): 100pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT...
2SB1659
Cost): 100pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Collector current: 6A. Pd (Power Dissipation, Max): 50W. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 110V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD2589. BE diode: no. CE diode: no
2SB1659
Cost): 100pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Collector current: 6A. Pd (Power Dissipation, Max): 50W. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 110V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD2589. BE diode: no. CE diode: no
Set of 1
8.18$ VAT incl.
(8.18$ excl. VAT)
8.18$
Out of stock
2SB175

2SB175

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-1. Configura...
2SB175
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-1. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.125W
2SB175
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-1. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.125W
Set of 1
0.62$ VAT incl.
(0.62$ excl. VAT)
0.62$
Out of stock
2SB185

2SB185

Quantity per case: 1. Semiconductor material: GE. Collector current: 0.15A. Note: >30. Pd (Power Dis...
2SB185
Quantity per case: 1. Semiconductor material: GE. Collector current: 0.15A. Note: >30. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP. Collector/emitter voltage Vceo: 25V
2SB185
Quantity per case: 1. Semiconductor material: GE. Collector current: 0.15A. Note: >30. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP. Collector/emitter voltage Vceo: 25V
Set of 1
1.43$ VAT incl.
(1.43$ excl. VAT)
1.43$
Quantity in stock : 4
2SB511

2SB511

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Confi...
2SB511
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 10W
2SB511
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 1.5A. Maximum dissipation Ptot [W]: 10W
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$
Quantity in stock : 8
2SB511A

2SB511A

Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Collector current: 1.5A. Pd (Power...
2SB511A
Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP. Collector/emitter voltage Vceo: 35V
2SB511A
Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP. Collector/emitter voltage Vceo: 35V
Set of 1
1.78$ VAT incl.
(1.78$ excl. VAT)
1.78$
Quantity in stock : 2
2SB514

2SB514

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Confi...
2SB514
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 2A. Maximum dissipation Ptot [W]: 20W
2SB514
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 2A. Maximum dissipation Ptot [W]: 20W
Set of 1
1.15$ VAT incl.
(1.15$ excl. VAT)
1.15$
Quantity in stock : 2
2SB526

2SB526

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: M17/J. Configur...
2SB526
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: M17/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 90V/80V. Collector current Ic [A], max.: 800mA. Maximum dissipation Ptot [W]: 10W
2SB526
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: M17/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 90V/80V. Collector current Ic [A], max.: 800mA. Maximum dissipation Ptot [W]: 10W
Set of 1
2.35$ VAT incl.
(2.35$ excl. VAT)
2.35$
Out of stock
2SB529

2SB529

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: M17/J. Configur...
2SB529
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: M17/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/20V. Collector current Ic [A], max.: 2A. Maximum dissipation Ptot [W]: 10W
2SB529
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: M17/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/20V. Collector current Ic [A], max.: 2A. Maximum dissipation Ptot [W]: 10W
Set of 1
1.00$ VAT incl.
(1.00$ excl. VAT)
1.00$
Quantity in stock : 20
2SB542

2SB542

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SB542
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V/15V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.3W
2SB542
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V/15V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.3W
Set of 1
1.79$ VAT incl.
(1.79$ excl. VAT)
1.79$
Quantity in stock : 6
2SB544

2SB544

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D17/C. Configur...
2SB544
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D17/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 1A. Maximum dissipation Ptot [W]: 0.9W
2SB544
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D17/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 1A. Maximum dissipation Ptot [W]: 0.9W
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 620
2SB562C

2SB562C

Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: hFE 120...240. Collect...
2SB562C
Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: hFE 120...240. Collector current: 1A. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 25V. Collector/emitter voltage Vceo: 20V. Spec info: complementary transistor (pair) 2SD468
2SB562C
Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: hFE 120...240. Collector current: 1A. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 25V. Collector/emitter voltage Vceo: 20V. Spec info: complementary transistor (pair) 2SD468
Set of 1
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$
Quantity in stock : 4
2SB642

2SB642

Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Collec...
2SB642
Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.4W. Housing: SC-71. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V
2SB642
Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.4W. Housing: SC-71. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V
Set of 1
0.33$ VAT incl.
(0.33$ excl. VAT)
0.33$
Quantity in stock : 13
2SB643

2SB643

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D8/C. Configura...
2SB643
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D8/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.6W
2SB643
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D8/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.6W
Set of 1
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$
Quantity in stock : 135
2SB647

2SB647

Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max h...
2SB647
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no
2SB647
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no
Set of 1
1.59$ VAT incl.
(1.59$ excl. VAT)
1.59$
Quantity in stock : 134
2SB647-SMD

2SB647-SMD

Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max h...
2SB647-SMD
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. BE diode: no. CE diode: no
2SB647-SMD
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
1.10$ VAT incl.
(1.10$ excl. VAT)
1.10$
Quantity in stock : 146
2SB649A

2SB649A

Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. ...
2SB649A
Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD669A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
2SB649A
Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD669A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
1.58$ VAT incl.
(1.58$ excl. VAT)
1.58$
Quantity in stock : 48
2SB688

2SB688

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 160. Minimum hFE ga...
2SB688
Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 160. Minimum hFE gain: 55. Collector current: 8A. Marking on the case: B668. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD718
2SB688
Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 160. Minimum hFE gain: 55. Collector current: 8A. Marking on the case: B668. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD718
Set of 1
2.49$ VAT incl.
(2.49$ excl. VAT)
2.49$
Quantity in stock : 2
2SB695

2SB695

Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Collector current: 7A. Pd (Power D...
2SB695
Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Collector current: 7A. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP. Collector/emitter voltage Vceo: 170V
2SB695
Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Collector current: 7A. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP. Collector/emitter voltage Vceo: 170V
Set of 1
10.96$ VAT incl.
(10.96$ excl. VAT)
10.96$
Quantity in stock : 1
2SB707

2SB707

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Confi...
2SB707
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V/60V. Collector current Ic [A], max.: 7A. Maximum dissipation Ptot [W]: 40W
2SB707
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V/60V. Collector current Ic [A], max.: 7A. Maximum dissipation Ptot [W]: 40W
Set of 1
3.97$ VAT incl.
(3.97$ excl. VAT)
3.97$
Quantity in stock : 18
2SB709

2SB709

Cost): 2.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain: 460. ...
2SB709
Cost): 2.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain: 460. Minimum hFE gain: 160. Collector current: 0.1A. Ic(pulse): 0.2A. Marking on the case: AQ. RoHS: no. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): MINI MOLD. Type of transistor: PNP. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 25V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD601. BE diode: no. CE diode: no
2SB709
Cost): 2.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain: 460. Minimum hFE gain: 160. Collector current: 0.1A. Ic(pulse): 0.2A. Marking on the case: AQ. RoHS: no. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): MINI MOLD. Type of transistor: PNP. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 25V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD601. BE diode: no. CE diode: no
Set of 1
0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
Quantity in stock : 5
2SB745

2SB745

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D8/C. Configura...
2SB745
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D8/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.3W
2SB745
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D8/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.3W
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 9
2SB764

2SB764

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D17/C. Configur...
2SB764
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D17/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 1A. Maximum dissipation Ptot [W]: 0.9W
2SB764
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D17/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 1A. Maximum dissipation Ptot [W]: 0.9W
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 108
2SB772

2SB772

Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Collector current: 3A. Pd (Power ...
2SB772
Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Spec info: complementary transistor (pair) 2SD882. Housing: TO-126 (TO-225, SOT-32)
2SB772
Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Spec info: complementary transistor (pair) 2SD882. Housing: TO-126 (TO-225, SOT-32)
Set of 1
1.02$ VAT incl.
(1.02$ excl. VAT)
1.02$
Quantity in stock : 42
2SB817

2SB817

Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Collector current: 12A. Pd (Power...
2SB817
Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Collector current: 12A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SD1047. BE diode: no. CE diode: no
2SB817
Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Collector current: 12A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SD1047. BE diode: no. CE diode: no
Set of 1
2.41$ VAT incl.
(2.41$ excl. VAT)
2.41$
Quantity in stock : 325
2SB857

2SB857

Resistor B: 10. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. ...
2SB857
Resistor B: 10. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 70V. Collector/emitter voltage Vceo: 50V. Spec info: complementary transistor (pair) 2SD1133
2SB857
Resistor B: 10. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 70V. Collector/emitter voltage Vceo: 50V. Spec info: complementary transistor (pair) 2SD1133
Set of 1
1.17$ VAT incl.
(1.17$ excl. VAT)
1.17$
1...8910 1112...128

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