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Electronic components and equipment, for businesses and individuals

2SB647

2SB647
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.59$ 1.59$
5 - 9 1.51$ 1.51$
10 - 24 1.43$ 1.43$
25 - 49 1.35$ 1.35$
50 - 99 1.32$ 1.32$
100 - 135 1.21$ 1.21$
Quantity U.P
1 - 4 1.59$ 1.59$
5 - 9 1.51$ 1.51$
10 - 24 1.43$ 1.43$
25 - 49 1.35$ 1.35$
50 - 99 1.32$ 1.32$
100 - 135 1.21$ 1.21$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 135
Set of 1

2SB647. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 14:25.

Equivalent products :

Quantity in stock : 4415
2SA1013

2SA1013

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain...
2SA1013
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no
2SA1013
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$

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2SC2383

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IKW30N60H3

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CR-05JL7-12K

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2SA1013-Y

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2SA965

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Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: PCT Process. Max hFE g...
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2N5401

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RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
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