Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.59$ | 1.59$ |
5 - 9 | 1.51$ | 1.51$ |
10 - 24 | 1.43$ | 1.43$ |
25 - 49 | 1.35$ | 1.35$ |
50 - 99 | 1.32$ | 1.32$ |
100 - 135 | 1.21$ | 1.21$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.59$ | 1.59$ |
5 - 9 | 1.51$ | 1.51$ |
10 - 24 | 1.43$ | 1.43$ |
25 - 49 | 1.35$ | 1.35$ |
50 - 99 | 1.32$ | 1.32$ |
100 - 135 | 1.21$ | 1.21$ |
2SB647. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD667. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 14:25.
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