Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.10$ | 1.10$ |
5 - 9 | 1.05$ | 1.05$ |
10 - 24 | 0.99$ | 0.99$ |
25 - 49 | 0.94$ | 0.94$ |
50 - 99 | 0.91$ | 0.91$ |
100 - 134 | 0.79$ | 0.79$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.10$ | 1.10$ |
5 - 9 | 1.05$ | 1.05$ |
10 - 24 | 0.99$ | 0.99$ |
25 - 49 | 0.94$ | 0.94$ |
50 - 99 | 0.91$ | 0.91$ |
100 - 134 | 0.79$ | 0.79$ |
2SB647-SMD. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 17:25.
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