2SB688

Quantity	excl. VAT	VAT incl.
1 - 4	2.49$	2.49$
5 - 9	2.36$	2.36$
10 - 24	2.24$	2.24$
25 - 48	2.12$	2.12$

Quantity	U.P
1 - 4	2.49$	2.49$
5 - 9	2.36$	2.36$
10 - 24	2.24$	2.24$
25 - 48	2.12$	2.12$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 48

Set of 1

2SB688. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 160. Minimum hFE gain: 55. Collector current: 8A. Marking on the case: B668. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD718. Quantity in stock updated on 25/12/2024, 15:25.

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Delivery in 2-3 days, with postal tracking!