Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 340. Minimum hFE gain: 85. Collector current: 1A. Ic(pulse): 1.5A. Pd (Power Dissipation, Max): 5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Housing (according to data sheet): TO-126B-A1. Type of transistor: NPN. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 35V. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no