Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.82$ | 0.82$ |
5 - 9 | 0.78$ | 0.78$ |
10 - 18 | 0.73$ | 0.73$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.82$ | 0.82$ |
5 - 9 | 0.78$ | 0.78$ |
10 - 18 | 0.73$ | 0.73$ |
2SB709. Cost): 2.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain: 460. Minimum hFE gain: 160. Collector current: 0.1A. Ic(pulse): 0.2A. Marking on the case: AQ. RoHS: no. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): MINI MOLD. Type of transistor: PNP. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 25V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD601. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 17:25.
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