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Semiconductors
Transistors

Transistors

3185 products available
Products per page :
1...789 1011...128
Quantity in stock : 176
2SB1123T

2SB1123T

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE g...
2SB1123T
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 2A. Note: screen printing/SMD code BF. Marking on the case: BF. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Spec info: complementary transistor (pair) 2SD1623T. BE diode: no. CE diode: no
2SB1123T
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 2A. Note: screen printing/SMD code BF. Marking on the case: BF. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Spec info: complementary transistor (pair) 2SD1623T. BE diode: no. CE diode: no
Set of 1
1.19$ VAT incl.
(1.19$ excl. VAT)
1.19$
Quantity in stock : 89
2SB1132

2SB1132

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. ...
2SB1132
Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Collector current: 1A. Marking on the case: BA. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89 (SC-62). Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 32V. Vebo: 5V. Spec info: SMD BA0. BE diode: no. CE diode: no
2SB1132
Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Collector current: 1A. Marking on the case: BA. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89 (SC-62). Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 32V. Vebo: 5V. Spec info: SMD BA0. BE diode: no. CE diode: no
Set of 1
0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 38
2SB1143

2SB1143

Cost): 39pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: ...
2SB1143
Cost): 39pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: 4A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.35V. Maximum saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: NF/SL. Spec info: complementary transistor (pair) 2SD1683. BE diode: no. CE diode: no
2SB1143
Cost): 39pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: 4A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.35V. Maximum saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: NF/SL. Spec info: complementary transistor (pair) 2SD1683. BE diode: no. CE diode: no
Set of 1
1.28$ VAT incl.
(1.28$ excl. VAT)
1.28$
Quantity in stock : 9
2SB1185

2SB1185

Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-E-L. Ma...
2SB1185
Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-E-L. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Housing: TO-220FP. Housing (according to data sheet): SC-67. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no
2SB1185
Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-E-L. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Housing: TO-220FP. Housing (according to data sheet): SC-67. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
1.72$ VAT incl.
(1.72$ excl. VAT)
1.72$
Out of stock
2SB1204

2SB1204

Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: High-Curr...
2SB1204
Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: High-Current switching, low-sat. Collector current: 8A. Id(imp): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Tf (type): 20 ns. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 50V. Spec info: complementary transistor (pair) 2SD1804. BE diode: no. CE diode: no
2SB1204
Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: High-Current switching, low-sat. Collector current: 8A. Id(imp): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Tf (type): 20 ns. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 50V. Spec info: complementary transistor (pair) 2SD1804. BE diode: no. CE diode: no
Set of 1
4.39$ VAT incl.
(4.39$ excl. VAT)
4.39$
Quantity in stock : 15
2SB1205S

2SB1205S

Quantity per case: 1. Semiconductor material: silicon. FT: 320 MHz. Function: Strobe High-Current sw...
2SB1205S
Quantity per case: 1. Semiconductor material: silicon. FT: 320 MHz. Function: Strobe High-Current switching. Collector current: 5A. Note: hFE 140...280. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP. Collector/emitter voltage Vceo: 25V. Spec info: TO-251 (I-Pak)
2SB1205S
Quantity per case: 1. Semiconductor material: silicon. FT: 320 MHz. Function: Strobe High-Current switching. Collector current: 5A. Note: hFE 140...280. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP. Collector/emitter voltage Vceo: 25V. Spec info: TO-251 (I-Pak)
Set of 1
1.38$ VAT incl.
(1.38$ excl. VAT)
1.38$
Out of stock
2SB1226

2SB1226

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Func...
2SB1226
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Collector current: 3A. Note: =4000. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP. Collector/emitter voltage Vceo: 110V
2SB1226
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Collector current: 3A. Note: =4000. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP. Collector/emitter voltage Vceo: 110V
Set of 1
5.26$ VAT incl.
(5.26$ excl. VAT)
5.26$
Quantity in stock : 8
2SB1237

2SB1237

Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max ...
2SB1237
Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Collector current: 1A. Ic(pulse): 2A. Marking on the case: TU2. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 32V
2SB1237
Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Collector current: 1A. Ic(pulse): 2A. Marking on the case: TU2. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 32V
Set of 1
1.14$ VAT incl.
(1.14$ excl. VAT)
1.14$
Quantity in stock : 1
2SB1240

2SB1240

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Colle...
2SB1240
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Collector current: 2A. Note: hFE 180...390. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Spec info: 2SB1240R
2SB1240
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Collector current: 2A. Note: hFE 180...390. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Spec info: 2SB1240R
Set of 1
2.24$ VAT incl.
(2.24$ excl. VAT)
2.24$
Quantity in stock : 6
2SB1243

2SB1243

Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Max hFE gain: 390. Minimum hFE ga...
2SB1243
Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Collector current: 3A. Ic(pulse): 4.5A. Marking on the case: B1243 (RN). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial planar type'. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V
2SB1243
Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Collector current: 3A. Ic(pulse): 4.5A. Marking on the case: B1243 (RN). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial planar type'. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V
Set of 1
4.62$ VAT incl.
(4.62$ excl. VAT)
4.62$
Quantity in stock : 10
2SB1274

2SB1274

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low-Frequency Power Am...
2SB1274
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low-Frequency Power Amplifier. Collector current: 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Spec info: complementary transistor (pair) 2SD1913
2SB1274
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low-Frequency Power Amplifier. Collector current: 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Spec info: complementary transistor (pair) 2SD1913
Set of 1
3.17$ VAT incl.
(3.17$ excl. VAT)
3.17$
Out of stock
2SB1318

2SB1318

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Collector curren...
2SB1318
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Collector current: 3A. Note: >2000. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V
2SB1318
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Collector current: 3A. Note: >2000. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V
Set of 1
2.06$ VAT incl.
(2.06$ excl. VAT)
2.06$
Quantity in stock : 13
2SB1340

2SB1340

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Func...
2SB1340
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: insulated package transistor. Collector current: 6A. Note: =10000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V
2SB1340
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: insulated package transistor. Collector current: 6A. Note: =10000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V
Set of 1
1.37$ VAT incl.
(1.37$ excl. VAT)
1.37$
Quantity in stock : 41
2SB1342

2SB1342

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Max ...
2SB1342
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Max hFE gain: 10000. Minimum hFE gain: 1000. Collector current: 4A. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 7V. Spec info: complementary transistor (pair) 2SD1933
2SB1342
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Max hFE gain: 10000. Minimum hFE gain: 1000. Collector current: 4A. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 7V. Spec info: complementary transistor (pair) 2SD1933
Set of 1
4.31$ VAT incl.
(4.31$ excl. VAT)
4.31$
Quantity in stock : 365
2SB1375

2SB1375

Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Collector current: 3A. Pd (Power D...
2SB1375
Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Spec info: complementary transistor (pair) 2SD1913
2SB1375
Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Spec info: complementary transistor (pair) 2SD1913
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$
Quantity in stock : 2
2SB1470

2SB1470

Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Func...
2SB1470
Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Collector current: 8A. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Type of transistor: PNP. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. BE diode: no. CE diode: no
2SB1470
Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Collector current: 8A. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Type of transistor: PNP. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
8.57$ VAT incl.
(8.57$ excl. VAT)
8.57$
Quantity in stock : 27
2SB1560

2SB1560

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. ...
2SB1560
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Max hFE gain: 5000. Collector current: 10A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Vcbo: 160V. Collector/emitter voltage Vceo: 150V. Spec info: complementary transistor (pair) 2SD2390
2SB1560
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Max hFE gain: 5000. Collector current: 10A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Vcbo: 160V. Collector/emitter voltage Vceo: 150V. Spec info: complementary transistor (pair) 2SD2390
Set of 1
6.55$ VAT incl.
(6.55$ excl. VAT)
6.55$
Quantity in stock : 25
2SB1560-SKN

2SB1560-SKN

Darlington transistor?: 1. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Functi...
2SB1560-SKN
Darlington transistor?: 1. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Collector current: 10A. Ic(pulse): A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN ( MT-100 ). Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD2390. BE diode: no. CE diode: no
2SB1560-SKN
Darlington transistor?: 1. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Collector current: 10A. Ic(pulse): A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN ( MT-100 ). Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD2390. BE diode: no. CE diode: no
Set of 1
6.54$ VAT incl.
(6.54$ excl. VAT)
6.54$
Quantity in stock : 102
2SB1565

2SB1565

Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: NF-L. Collector current...
2SB1565
Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: NF-L. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) 2SD2394
2SB1565
Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: NF-L. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) 2SD2394
Set of 1
1.03$ VAT incl.
(1.03$ excl. VAT)
1.03$
Out of stock
2SB1570-SKN

2SB1570-SKN

Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Collector current: 12A. Pd (P...
2SB1570-SKN
Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Collector current: 12A. Pd (Power Dissipation, Max): 150W. Type of transistor: PNP. Vcbo: 160V. Collector/emitter voltage Vceo: 150V. Spec info: complementary transistor (pair) 2SD2401
2SB1570-SKN
Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Collector current: 12A. Pd (Power Dissipation, Max): 150W. Type of transistor: PNP. Vcbo: 160V. Collector/emitter voltage Vceo: 150V. Spec info: complementary transistor (pair) 2SD2401
Set of 1
22.71$ VAT incl.
(22.71$ excl. VAT)
22.71$
Quantity in stock : 34
2SB1587

2SB1587

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 65 MHz. Func...
2SB1587
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 65 MHz. Function: hFE 5000. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SD2438. Housing: TO-3PF (SOT399, 2-16E3A)
2SB1587
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 65 MHz. Function: hFE 5000. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SD2438. Housing: TO-3PF (SOT399, 2-16E3A)
Set of 1
3.58$ VAT incl.
(3.58$ excl. VAT)
3.58$
Quantity in stock : 36
2SB1588

2SB1588

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Func...
2SB1588
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 5000. Collector current: 10A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SD2439. Housing: TO-3PF (SOT399, 2-16E3A)
2SB1588
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 5000. Collector current: 10A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SD2439. Housing: TO-3PF (SOT399, 2-16E3A)
Set of 1
2.97$ VAT incl.
(2.97$ excl. VAT)
2.97$
Out of stock
2SB1624

2SB1624

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Func...
2SB1624
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: NF-L. Collector current: 6A. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( SOT-93 ). Type of transistor: PNP. Collector/emitter voltage Vceo: 110V
2SB1624
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: NF-L. Collector current: 6A. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( SOT-93 ). Type of transistor: PNP. Collector/emitter voltage Vceo: 110V
Set of 1
4.87$ VAT incl.
(4.87$ excl. VAT)
4.87$
Quantity in stock : 8
2SB1626

2SB1626

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Coll...
2SB1626
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Collector current: 6A. Note: >5000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP. Collector/emitter voltage Vceo: 110V. Spec info: complementary transistor (pair) 2SD2495
2SB1626
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Collector current: 6A. Note: >5000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP. Collector/emitter voltage Vceo: 110V. Spec info: complementary transistor (pair) 2SD2495
Set of 1
2.55$ VAT incl.
(2.55$ excl. VAT)
2.55$
Quantity in stock : 3
2SB1647

2SB1647

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Coll...
2SB1647
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 150V. Function: HI-FI Audio Power amplifier and Regulator. Spec info: complementary transistor (pair) 2SD2560
2SB1647
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 150V. Function: HI-FI Audio Power amplifier and Regulator. Spec info: complementary transistor (pair) 2SD2560
Set of 1
17.78$ VAT incl.
(17.78$ excl. VAT)
17.78$
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