Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 700. Minimum hFE gain: 200. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Function: Low noise, Audio amplifier. Spec info: complementary transistor (pair) 2SC2240. BE diode: no. CE diode: no