2SB649A

Quantity	excl. VAT	VAT incl.
1 - 4	1.58$	1.58$
5 - 9	1.51$	1.51$
10 - 24	1.43$	1.43$
25 - 49	1.35$	1.35$
50 - 99	1.32$	1.32$
100 - 146	1.12$	1.12$

Quantity	U.P
1 - 4	1.58$	1.58$
5 - 9	1.51$	1.51$
10 - 24	1.43$	1.43$
25 - 49	1.35$	1.35$
50 - 99	1.32$	1.32$
100 - 146	1.12$	1.12$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 146

Set of 1

2SB649A. Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD669A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!