N-channel FETs and MOSFETs

N-channel transistor, 0.7A, 100uA, 14 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 600V. ID (T=25°C): 0.7A. Idss (max): 100uA. On-resistance Rds On: 14 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 600V. C(in): 96pF. Cost): 29pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 2.8A. IDss (min): 1uA. Marking on the case: K3850. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 9 ns. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V

N-channel transistor, 5.3A, 9A, 100uA, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=100°C): 5.3A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1 Ohm. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. C(in): 2200pF. Cost): 45pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1.4us. Type of transistor: MOSFET. Function: Switching Regulator Applications. G-S Protection: yes. Id(imp): 27A. IDss (min): 1uA. Marking on the case: K3878. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: Vth=2.0 to 4.0V (VDS=10V, ID=1mA). Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 65 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 20A, 500uA, 0.22 Ohms, TO-3PN, 2-16C1B, 600V. ID (T=25°C): 20A. Idss (max): 500uA. On-resistance Rds On: 0.22 Ohms. Housing: TO-3PN. Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 600V. C(in): 4250pF. Cost): 420pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 1350 ns. Type of transistor: MOSFET. Function: Switching Regulator. G-S Protection: yes. Id(imp): 80A. Marking on the case: K3911. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 45 ns. Technology: Field Effect MOS Type(MACH-II-MOS VI). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 23A, 500uA, 0.20 Ohms, TO-3PN ( 2-16C1B ), TO-3P, 500V. ID (T=25°C): 23A. Idss (max): 500uA. On-resistance Rds On: 0.20 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 4250pF. Cost): 420pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 380 ns. Type of transistor: MOSFET. Function: Switching Regulator. G-S Protection: yes. Id(imp): 92A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 45 ns. Technology: Field Effect MOS Type(MACH-II-MOS VI). Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V

N-channel transistor, 13A, 100uA, 0.33 Ohms, TO-220FP, TO-220F, 500V. ID (T=25°C): 13A. Idss (max): 100uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 2400pF. Cost): 220pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. G-S Protection: yes. Id(imp): 52A. Marking on the case: K4012. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 70 ns. Technology: Field Effect Transistor, MOS Type (TT-MOS VI). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 6A, 100uA, 1.35 Ohms, TO-220FP, TO-220F ( 2-10U1B ), 800V. ID (T=25°C): 6A. Idss (max): 100uA. On-resistance Rds On: 1.35 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( 2-10U1B ). Voltage Vds(max): 800V. C(in): 1400pF. Cost): 130pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 1100 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. G-S Protection: yes. Id(imp): 18A. Marking on the case: K4013 Q. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 80 ns. Technology: Field Effect Transistor, MOS Type (TT-MOS IV). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 5A, 5A, 0.09 Ohms, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 60V. ID (T=25°C): 5A. Idss (max): 5A. On-resistance Rds On: 0.09 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Chopper Regulator, DC-DC Converter, Motor driver. Id(imp): 20A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor, MOS Type (U-MOS III)

N-channel transistor, 28A, 60A, 1uA, 5.2m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=100°C): 28A. ID (T=25°C): 60A. Idss (max): 1uA. On-resistance Rds On: 5.2m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 2900pF. Cost): 450pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Function: High Current Switching Applications. G-S Protection: no. Id(imp): 180A. IDss (min): 1uA. Marking on the case: K4075. Number of terminals: 3. Pd (Power Dissipation, Max): 52W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 54 ns. Td(on): 18 ns. Technology: POWER MOSFET, Field Effect Transistor. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.5V

N-channel transistor, n/a, 20A, 100uA, 0.21 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 500V. ID (T=100°C): n/a. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.21 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 500V. C(in): 3400pF. Cost): 320pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. G-S Protection: yes. Id(imp): 80A. IDss (min): n/a. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 280 ns. Td(on): 130 ns. Technology: Field Effect Transistor, MOS Type (MOS VI). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 5A, 5A, 800V. ID (T=25°C): 5A. Idss (max): 5A. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: V-MOS. Pd (Power Dissipation, Max): 100W

N-channel transistor, 3A, 5A, 5A, 2.5 Ohms, 850V. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 5A. On-resistance Rds On: 2.5 Ohms. Voltage Vds(max): 850V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 150W

N-channel transistor, 5A, 5A, 800V. ID (T=25°C): 5A. Idss (max): 5A. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 100W. Technology: V-MOS

N-channel transistor, 1.5A, 3A, 3A, 4 Ohms, 800V. ID (T=100°C): 1.5A. ID (T=25°C): 3A. Idss (max): 3A. On-resistance Rds On: 4 Ohms. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: (F). Pd (Power Dissipation, Max): 40W. Technology: V-MOS

N-channel transistor, 3A, 3A, 500uA, 4 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 3A. ID (T=25°C): 3A. Idss (max): 500uA. On-resistance Rds On: 4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. C(in): 900pF. Cost): 90pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. G-S Protection: no. Id(imp): 12A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Spec info: Samsung B4054-0018. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 60 ns. Technology: V-MOS S-L. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, 0.6A, 0.6A, 1.2 Ohms, TO-92, TO-92MOD, 100V. ID (T=25°C): 0.6A. Idss (max): 0.6A. On-resistance Rds On: 1.2 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92MOD. Voltage Vds(max): 100V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Relay Drive, Motor Drive. Id(imp): 1.8A. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting

N-channel transistor, 12A, 25A, 25A, 0.046 Ohms, 60V. ID (T=100°C): 12A. ID (T=25°C): 25A. Idss (max): 25A. On-resistance Rds On: 0.046 Ohms. Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 40W. Technology: V-MOS

N-channel transistor, 9A, 9A, 1 Ohm, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 1 Ohm. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 800V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 26A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Technology: F-II Series POWER MOSFET

N-channel transistor, 0.15A, 10uA, 3.7 Ohms, SMD, SSFP, 30 v. ID (T=25°C): 0.15A. Idss (max): 10uA. On-resistance Rds On: 3.7 Ohms. Housing: SMD. Housing (according to data sheet): SSFP. Voltage Vds(max): 30 v. C(in): 7pF. Cost): 5.9pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching. G-S Protection: yes. Id(imp): 0.6A. Pd (Power Dissipation, Max): 0.15W. Assembly/installation: surface-mounted component (SMD). Td(off): 150 ns. Td(on): 19 ns. Technology: silicon MOSFET transistor. Gate/source voltage (off) max.: 1.3V. Gate/source voltage (off) min.: 0.4V

N-channel transistor, PCB soldering (SMD), SOT-343, 12.5V, 30mA. Housing: PCB soldering (SMD). Housing: SOT-343. Drain-source voltage Uds [V]: 12.5V. Drain Current Id [A] @ 25°C: 30mA. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 4. Gate breakdown voltage Ugs [V]: 1V. Ciss Gate Capacitance [pF]: 2pF. Maximum dissipation Ptot [W]: 0.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +125°C

ROHS: Yes. Housing: TSSOP8. Assembly/installation: SMD. Type of transistor: N-MOSFET x2. Operating temperature: -50...150°C. Drain-source voltage: 20V. Drain current: 6.5A. On-state resistance: 19m Ohms. Power: 1.5W. Peak drain current: 24A

N-channel transistor, 8A, 10mA, TO-247, TO-247, 200V. ID (T=25°C): 8A. Idss (max): 10mA. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 500pF. Cost): 300pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER MOSFET. G-S Protection: no. IDss (min): 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) ALF08P20V. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Gate/source voltage Vgs: 14V

N-channel transistor, 4.7A, 5.7A, 1uA, 5.7A, 22m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 4.7A. ID (T=25°C): 5.7A. Idss: 1uA. Idss (max): 5.7A. On-resistance Rds On: 22m Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 630pF. Cost): 75pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 16.8 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. G-S Protection: no. Id(imp): 25A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21.5 ns. Td(on): 3.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Gate/source voltage Vgs: 12V

N-channel transistor, 4.9A, 5.8A, 5uA, 23.4m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 4.9A. ID (T=25°C): 5.8A. Idss (max): 5uA. On-resistance Rds On: 23.4m Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 621pF. Cost): 118pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 30A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15.1 ns. Td(on): 4.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 3.5A, 4.1A, 1uA, 4.1A, 0.052 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 3.5A. ID (T=25°C): 4.1A. Idss: 1uA. Idss (max): 4.1A. On-resistance Rds On: 0.052 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 520pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. G-S Protection: no. Id(imp): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Gate/source voltage Vgs: 20V

N-channel transistor, 5.2A, 6.5A, 5uA, 18M Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. ID (T=100°C): 5.2A. ID (T=25°C): 6.5A. Idss (max): 5uA. On-resistance Rds On: 18M Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 20V. C(in): 1160pF. Cost): 187pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 17.7 ns. Type of transistor: MOSFET. Function: Low Input Charge. G-S Protection: yes. Id(imp): 30A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Spec info: ESD protected. Assembly/installation: surface-mounted component (SMD). Td(off): 51.7 ns. Td(on): 6.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V