N-channel FETs and MOSFETs

N-channel transistor, 2A, 100uA, 1.2 Ohms, TO-220FP, TO-220F, 250V. ID (T=25°C): 2A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. C(in): 220pF. Cost): 60pF. Channel type: N. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 4A. Marking on the case: K2538. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 10 ns. Technology: Power F-MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

N-channel transistor, 4A, 8A, 8A, 0.85 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 4A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Channel type: N. Type of transistor: MOSFET. Function: Switching Regulator. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Technology: MOS Type (TT.MOSV). Quantity per case: 1

N-channel transistor, 3A, 6A, 100uA, 0.9 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 100uA. On-resistance Rds On: 0.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Marking on the case: K2545. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 45 ns. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 5A, 100uA, 1.9 Ohms, TO-220FP, TO-220F, 800V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 1.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 1800pF. Cost): 105pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: High Speed, H.V. Id(imp): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 80 ns. Technology: Field Effect (TT-MOSIII). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 9A, 9A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. ID (T=25°C): 9A. Idss (max): 9A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Function: High Speed, H.V. Assembly/installation: PCB through-hole mounting. Technology: Field Effect (TT-MOSIII). Quantity per case: 1

N-channel transistor, 9A, 100uA, 1.1 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 900V. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 900V. C(in): 2040pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 1.6us. Type of transistor: MOSFET. Function: High Speed, H.V. Id(imp): 27A. Marking on the case: K2611. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 95 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSIII). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 1.5A, 2A, 100uA, 0.33 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( 2-5K1B ), 60V. ID (T=100°C): 1.5A. ID (T=25°C): 2A. Idss (max): 100uA. On-resistance Rds On: 0.33 Ohms. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89 ( 2-5K1B ). Voltage Vds(max): 60V. C(in): 150pF. Cost): 70pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Field Effect Transistor. G-S Protection: Suppressor. Id(imp): 6A. Marking on the case: ZA. Temperature: +150°C. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 150 ns. Td(on): 30 ns. Technology: MOS Type (L2.TT.MOSV). Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.8V. Number of terminals: 3. Quantity per case: 1

N-channel transistor, 4A, 1mA, 2 Ohms, TO-220FP, TO-220FI, 600V. ID (T=25°C): 4A. Idss (max): 1mA. On-resistance Rds On: 2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Voltage Vds(max): 600V. C(in): 700pF. Cost): 220pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching. Id(imp): 16A. Marking on the case: K2625. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 3.5V. Vgs(th) max.: 5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 1.3A, 2.5A, 1mV, 3.6 Ohms, TO-220FP, TO-220FI-LS, 800V. ID (T=100°C): 1.3A. ID (T=25°C): 2.5A. Idss (max): 1mV. On-resistance Rds On: 3.6 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FI-LS. Voltage Vds(max): 800V. C(in): 550pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching Applications. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: V-MOS (F). Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 5.5V. Gate/source voltage (off) min.: 3.5V. Drain-source protection : yes. Germanium diode: no

N-channel transistor, 10A, 10A, 200uA, 0.73 Ohms, TO-220FP, TO-220F15, 500V. ID (T=100°C): 10A. ID (T=25°C): 10A. Idss (max): 200uA. On-resistance Rds On: 0.73 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 500V. C(in): 950pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 40A. IDss (min): 10uA. Marking on the case: K2640. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 9A, 100nA, 1.2 Ohms, TO-220FP, TO-220F15, 600V. ID (T=25°C): 9A. Idss (max): 100nA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 600V. C(in): 900pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 32A. IDss (min): 10nA. Marking on the case: K2645. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 4A, 4A, 200uA, 3.19 Ohms, TO-220, TO-220F15, 800V. ID (T=100°C): 4A. ID (T=25°C): 4A. Idss (max): 200uA. On-resistance Rds On: 3.19 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 800V. C(in): 450pF. Cost): 75pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 16A. IDss (min): 10uA. Marking on the case: K2647. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 20 ns. Technology: FAP-IIS Series MOS-FET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 3A, 6A, 500uA, 1.78 Ohms, TO-220FP, TO-220F15, 900V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 500uA. On-resistance Rds On: 1.78 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 900V. C(in): 900pF. Cost): 130pF. Channel type: N. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 24A. IDss (min): 10uA. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 5A, 100uA, 1.35 Ohms, TO-220FP, TO-220FP, 500V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 1.35 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 500V. C(in): 780pF. Cost): 200pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1400 ns. Type of transistor: MOSFET. Id(imp): 20A. Marking on the case: K2662. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 25 ns. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Function: High Speed Switching, Zener-Protected. Quantity per case: 1. Technology: Field Effect Transistor (TT-MOS V). G-S Protection: yes

N-channel transistor, 5A, 250uA, 2.1 Ohms, TO-220FP, TO-220F15, 900V. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 2.1 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 900V. C(in): 1140pF. Cost): 105pF. Channel type: N. Trr Diode (Min.): na. Type of transistor: MOSFET. Id(imp): 10A. IDss (min): na. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 55 ns. Technology: HVX-2 Series POWER MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

N-channel transistor, 6A, 12A, 100uA, 0.50 Ohms, TO-3P ( TO3P ), TO-3P, 600V. ID (T=100°C): 6A. ID (T=25°C): 12A. Idss (max): 100uA. On-resistance Rds On: 0.50 Ohms. Housing: TO-3P ( TO3P ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 600V. C(in): 2600pF. Cost): 270pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: Chopper Regulator, DC-DC Converter and Motor Drive. Id(imp): 48A. Marking on the case: K2699. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 45 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 3A, 100uA, 3.7 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 3A. Idss (max): 100uA. On-resistance Rds On: 3.7 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 750pF. Cost): 70pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1100 ns. Type of transistor: MOSFET. Id(imp): 9A. Marking on the case: K2700. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 55 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: High speed, High Voltage Switching, DC/DC Converters. G-S Protection: yes

N-channel transistor, 2A, 100uA, 2A, 3 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 500V. ID (T=25°C): 2A. Idss: 100uA. Idss (max): 2A. On-resistance Rds On: 3 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 500V. C(in): 280pF. Cost): 58pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Function: Fast Switching Speed. Id(imp): 6A. Marking on the case: K2715. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Technology: MOSFET. Gate/source voltage Vgs: 30 v. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 5A, 100uA, 2.3 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 2.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 1200pF. Cost): 20pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Id(imp): 15A. Marking on the case: K2717. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: High speed, High Voltage Switching, DC/DC Converters. G-S Protection: yes

N-channel transistor, 13A, 25A, 10uA, 28m Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 13A. ID (T=25°C): 25A. Idss (max): 10uA. On-resistance Rds On: 28m Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. C(in): 830pF. Cost): 430pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: High Current Switching. Id(imp): 100A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 21 ns. Technology: Field Effect Power Transistor. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 3.5A, 100uA, 1.7 Ohms, TO-220FP, TO-220FP, 600V. ID (T=25°C): 3.5A. Idss (max): 100uA. On-resistance Rds On: 1.7 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 800pF. Cost): 65pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 1400 ns. Type of transistor: MOSFET. Function: Chopper Regulator, DC-DC Converter. Id(imp): 14A. IDss (min): 1uA. Marking on the case: K2750. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 50 ns. Technology: Field Effect (TT-MOSV). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 5.5A, 10A, 500uA, 1 Ohm, TO-220FP, TO-220F, 600V. ID (T=100°C): 5.5A. ID (T=25°C): 10A. Idss (max): 500uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1100pF. Cost): 170pF. Channel type: N. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 36A. IDss (min): 10uA. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 25 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 12A, 100uA, 0.9 Ohms, TO-3P, 700V. ID (T=25°C): 12A. Idss (max): 100uA. On-resistance Rds On: 0.9 Ohms. Housing (according to data sheet): TO-3P. Voltage Vds(max): 700V. C(in): 1850pF. Cost): 400pF. Channel type: N. Trr Diode (Min.): 2.5us. Type of transistor: MOSFET. Function: High Speed ​​Power Switching. Id(imp): 48A. IDss (min): na. Td(off): 140 ns. Td(on): 25 ns. Technology: N-channel MOSFET transistor. Power: 175W. Tf(min): TO-3P ( TO3P ). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 12A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 500V. ID (T=25°C): 12A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 2040pF. Cost): 640pF. Channel type: N. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Chopper Regulator, DC-DC Converter and Motor Drive. Id(imp): 48A. IDss (min): na. Marking on the case: K2842. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 180 ns. Td(on): 58 ns. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Technology: Field Effect Transistor, MOS Type (TT.MOSV). Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 10A, 100uA, 0.54 Ohms, TO-220FP, TO-220F ( 2-10R1B ), 600V. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( 2-10R1B ). Voltage Vds(max): 600V. C(in): 2040pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: Chopper Regulator, DC-DC Converter and Motor Drive. Id(imp): 40A. IDss (min): na. Marking on the case: K2843. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 190 ns. Td(on): 58 ns. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Technology: Field Effect Transistor, MOS Type (TT.MOSV). G-S Protection: yes