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N-channel transistor, 4.9A, 5.8A, 5uA, 23.4m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3404A

N-channel transistor, 4.9A, 5.8A, 5uA, 23.4m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3404A
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Quantity excl. VAT VAT incl.
1 - 9 0.34$ 0.34$
10 - 24 0.32$ 0.32$
25 - 49 0.30$ 0.30$
50 - 99 0.29$ 0.29$
100 - 140 0.26$ 0.26$
Quantity U.P
1 - 9 0.34$ 0.34$
10 - 24 0.32$ 0.32$
25 - 49 0.30$ 0.30$
50 - 99 0.29$ 0.29$
100 - 140 0.26$ 0.26$
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Quantity in stock : 140
Set of 1

N-channel transistor, 4.9A, 5.8A, 5uA, 23.4m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3404A. N-channel transistor, 4.9A, 5.8A, 5uA, 23.4m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 4.9A. ID (T=25°C): 5.8A. Idss (max): 5uA. On-resistance Rds On: 23.4m Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 621pF. Cost): 118pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Id(imp): 30A. IDss (min): 1uA. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15.1 ns. Td(on): 4.5 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 16/04/2025, 08:25.

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