Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 8.73$ | 8.73$ |
2 - 2 | 8.30$ | 8.30$ |
3 - 4 | 7.86$ | 7.86$ |
5 - 9 | 7.42$ | 7.42$ |
10 - 19 | 7.25$ | 7.25$ |
20 - 24 | 7.07$ | 7.07$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 8.73$ | 8.73$ |
2 - 2 | 8.30$ | 8.30$ |
3 - 4 | 7.86$ | 7.86$ |
5 - 9 | 7.42$ | 7.42$ |
10 - 19 | 7.25$ | 7.25$ |
20 - 24 | 7.07$ | 7.07$ |
N-channel transistor, n/a, 20A, 100uA, 0.21 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 500V - 2SK4108. N-channel transistor, n/a, 20A, 100uA, 0.21 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 500V. ID (T=100°C): n/a. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.21 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 500V. C(in): 3400pF. Cost): 320pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. Id(imp): 80A. IDss (min): n/a. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 280 ns. Td(on): 130 ns. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Technology: Field Effect Transistor, MOS Type (MOS VI). Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 16/04/2025, 08:25.
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