N-channel transistor, 5.2A, 6.5A, 5uA, 18M Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V - AO3416

N-channel transistor, 5.2A, 6.5A, 5uA, 18M Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V - AO3416. N-channel transistor, 5.2A, 6.5A, 5uA, 18M Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. ID (T=100°C): 5.2A. ID (T=25°C): 6.5A. Idss (max): 5uA. On-resistance Rds On: 18M Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 20V. C(in): 1160pF. Cost): 187pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 17.7 ns. Type of transistor: MOSFET. Function: Low Input Charge. G-S Protection: yes. Id(imp): 30A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.4W. RoHS: yes. Spec info: ESD protected. Assembly/installation: surface-mounted component (SMD). Td(off): 51.7 ns. Td(on): 6.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Original product from manufacturer Alpha & Omega Semiconductors. Quantity in stock updated on 19/06/2025, 15:25.