N-channel transistor, 4.7A, 5.7A, 1uA, 5.7A, 22m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3400A

N-channel transistor, 4.7A, 5.7A, 1uA, 5.7A, 22m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3400A. N-channel transistor, 4.7A, 5.7A, 1uA, 5.7A, 22m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 4.7A. ID (T=25°C): 5.7A. Idss: 1uA. Idss (max): 5.7A. On-resistance Rds On: 22m Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 630pF. Cost): 75pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 16.8 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. G-S Protection: no. Id(imp): 25A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21.5 ns. Td(on): 3.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Gate/source voltage Vgs: 12V. Original product from manufacturer Alpha & Omega Semiconductors. Quantity in stock updated on 04/06/2025, 01:25.