N-channel transistor, 4.7A, 5.7A, 1uA, 5.7A, 22m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3400A

Quantity	excl. VAT	VAT incl.
1 - 9	0.31$	0.31$
10 - 24	0.30$	0.30$
25 - 49	0.28$	0.28$
50 - 99	0.26$	0.26$
100 - 249	0.26$	0.26$
250 - 499	0.25$	0.25$
500 - 753	0.24$	0.24$

Quantity	U.P
1 - 9	0.31$	0.31$
10 - 24	0.30$	0.30$
25 - 49	0.28$	0.28$
50 - 99	0.26$	0.26$
100 - 249	0.26$	0.26$
250 - 499	0.25$	0.25$
500 - 753	0.24$	0.24$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 753

Set of 1

N-channel transistor, 4.7A, 5.7A, 1uA, 5.7A, 22m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - AO3400A. N-channel transistor, 4.7A, 5.7A, 1uA, 5.7A, 22m Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=100°C): 4.7A. ID (T=25°C): 5.7A. Idss: 1uA. Idss (max): 5.7A. On-resistance Rds On: 22m Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 630pF. Cost): 75pF. Channel type: N. Trr Diode (Min.): 16.8 ns. Type of transistor: MOSFET. Function: Switching or PWM applications. Id(imp): 25A. IDss (min): 1uA. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21.5 ns. Td(on): 3.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Gate/source voltage Vgs: 12V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 16/04/2025, 08:25.

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