N-channel FETs and MOSFETs

N-channel transistor, 41A, 1000uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V. ID (T=25°C): 41A. Idss (max): 1000uA. On-resistance Rds On: 0.10 Ohms. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Voltage Vds(max): 500V. C(in): 4360pF. Cost): 895pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 280 ns. Type of transistor: MOSFET. Function: fast switching, low leakage. G-S Protection: no. Id(imp): 164A. IDss (min): 250uA. Pd (Power Dissipation, Max): 378W. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 11 ns. Technology: Power MOS 7 FREDFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 44A, 250uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Voltage Vds(max): 500V. C(in): 7400pF. Cost): 1000pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Function: fast switching, low leakage. G-S Protection: no. Id(imp): 176A. IDss (min): 25uA. Pd (Power Dissipation, Max): 450W. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 14 ns. Technology: Power MOSV. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v

N-channel transistor, 12A, 250uA, 0.75 Ohms, TO-247, TO-247, 800V. ID (T=25°C): 12A. Idss (max): 250uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2600pF. Cost): 270pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: fast switching, low leakage. G-S Protection: no. Id(imp): 48A. IDss (min): 25uA. Pd (Power Dissipation, Max): 260W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 12 ns. Technology: Power MOSV. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) min.: 2V. Vgs(th) max.: 4 v

N-channel transistor, PCB soldering (SMD), SOT-343, 5V, 0.1A. Housing: PCB soldering (SMD). Housing: SOT-343. Drain-source voltage Uds [V]: 5V. Drain Current Id [A] @ 25°C: 0.1A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 4. Manufacturer's marking: 5Fx. Gate breakdown voltage Ugs [V]: 0.37V. Maximum dissipation Ptot [W]: 0.27W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

N-channel transistor. Quantity per case: 1. Note: TU

N-channel transistor, 25mA, 15mA, TO-92, TO-92, 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. C(in): 4pF. Cost): 1.6pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Operating temperature: -...+150°C. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V

N-channel transistor, 25mA, 25mA, TO-92, TO-92, 30 v. ID (T=25°C): 25mA. Idss (max): 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. C(in): 4pF. Cost): 1.6pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 12mA. IGF: 10mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 7.5V. Gate/source voltage (off) min.: 3.2V

N-channel transistor, PCB soldering, TO-92, AM/FM/VHF, 25V, 10mA, TO-92, 39V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): AM/FM/VHF. Drain-source voltage Uds [V]: 25V. Drain current Idss [A] @ Ug=0V: 10mA. Housing (according to data sheet): TO-92. Voltage Vds(max): 39V. RoHS: no. Component family: N-Channel JFET Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF246A. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -14.5V @ +15V. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 14.5V. Gate/source voltage (off) min.: 0.6V

N-channel transistor, 13mA, TO-92, TO-92, 30 v. Idss (max): 13mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: for VHF/UHF RF amplifiers. IDss (min): 6mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.5V

N-channel transistor, 18mA, TO-92, TO-92, 30 v. Idss (max): 18mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: FET. Function: for VHF/UHF RF amplifiers. IDss (min): 11mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 0.5V

N-channel transistor, 25mA, 6.5mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 6.5mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 2mA. IGF: 10mA. Marking on the case: 20*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 2.2V. Gate/source voltage (off) min.: 0.4V

N-channel transistor, 25mA, 15mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 6mA. IGF: 10mA. Marking on the case: 21*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 6mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V

N-channel transistor, 25mA, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. ID (T=25°C): 25mA. Idss (max): 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. C(in): 1.7pF. Cost): 0.8pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: JFET. Function: HF-VHF. G-S Protection: no. IDss (min): 12mA. IGF: 10mA. Marking on the case: 22*. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon junction field-effect transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 7.8V. Gate/source voltage (off) min.: 3.2V

N-channel transistor, 30mA, 18mA, SOT-143, SOT-143, 18V. ID (T=25°C): 30mA. Idss (max): 18mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 18V. C(in): 3pF. Cost): 1.2pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: VHF and UHF applications with 12V supply voltage. G-S Protection: yes. IDss (min): 2mA. Marking on the case: M90. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Technology: Silicon N-channel dual-gate MOS-FET

N-channel transistor, 30mA, 4mA, SOT-143, SOT-143, 20V. ID (T=25°C): 30mA. Idss (max): 4mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 20V. C(in): 2.3pF. Cost): 0.8pF. Quantity per case: 1. Function: N MOSFET transistor. IDss (min): 2mA. Note: screen printing/SMD code MH. Marking on the case: MH. Number of terminals: 4. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD)

N-channel transistor, 30mA, 15mA, SOT-143, SOT-143, 12V. ID (T=25°C): 30mA. Idss (max): 15mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Voltage Vds(max): 12V. C(in): 2.1pF. Cost): 1.1pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: VHF and UHF applications with 12V supply voltage. G-S Protection: no. IDss (min): 5mA. Marking on the case: MOS. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Technology: Silicon N-channel dual-gate MOS-FET. Operating temperature: -55...+150°C

N-channel transistor, PCB soldering (SMD), SOT-143B, 12V, 30mA. Housing: PCB soldering (SMD). Housing: SOT-143B. Drain-source voltage Uds [V]: 12V. Drain Current Id [A] @ 25°C: 30mA. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 4. Manufacturer's marking: BF998. Gate breakdown voltage Ugs [V]: 2V. Ciss Gate Capacitance [pF]: 2.5pF. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 5mA. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain current Idss [A] @ Ug=0V: 5mA. RoHS: yes. Component family: N-Channel JFET Transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: M2. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -2V @ +10V. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

N-channel transistor, 120mA, 30nA, 15 Ohms, TO-92, TO-92, 200V. ID (T=25°C): 120mA. Idss (max): 30nA. On-resistance Rds On: 15 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. C(in): 85pF. Cost): 20pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Diode Tff(25°C): 8 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 2A. Marking on the case: BS107. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 7 ns. Technology: ENHANCEMENT MODE VERTICAL DMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering, TO-92, 1, 200V, 250mA, TO-92, 200V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): 1. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 250mA. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BS107A. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 6 ns. Technology: (D-S) MOSFETs. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 0.5A, 10nA, 1.2 Ohms, TO-92, TO-92, 60V. ID (T=25°C): 0.5A. Idss (max): 10nA. On-resistance Rds On: 1.2 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. C(in): 24pF. Cost): 40pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 1.2A. IDss (min): 0.5uA. Marking on the case: BS170. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Technology: Field effect transistor. Small signals. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V

N-channel transistor, PCB soldering, TO-92, 60V, 0.5A. Housing: PCB soldering. Housing: TO-92. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.5A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BS170G. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-92, 60V, 0.3A. Housing: PCB soldering. Housing: TO-92. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.3A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BS170_D27Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 24pF. Maximum dissipation Ptot [W]: 0.83W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, Other, Other, 600V. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 600V. CE diode: yes. Channel type: N. Germanium diode: no. Collector current: 30A. Number of terminals: 24. Dimensions: 107.5x45x17mm. Pd (Power Dissipation, Max): 700W. RoHS: yes. Spec info: 7x IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 250 ns. Td(on): 50 ns. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 0.1A, 0.1A, 15 Ohms, 50V. ID (T=25°C): 0.1A. Idss (max): 0.1A. On-resistance Rds On: 15 Ohms. Voltage Vds(max): 50V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: 5ns...20ns. Pd (Power Dissipation, Max): 0.3W. Technology: D-MOS Log.L