Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.40$ | 4.40$ |
5 - 9 | 4.18$ | 4.18$ |
10 - 24 | 3.96$ | 3.96$ |
25 - 37 | 3.74$ | 3.74$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.40$ | 4.40$ |
5 - 9 | 4.18$ | 4.18$ |
10 - 24 | 3.96$ | 3.96$ |
25 - 37 | 3.74$ | 3.74$ |
N-channel transistor, 3A, 3A, 500uA, 4 Ohms, TO-220, TO-220AB, 800V - 2SK904. N-channel transistor, 3A, 3A, 500uA, 4 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 3A. ID (T=25°C): 3A. Idss (max): 500uA. On-resistance Rds On: 4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. C(in): 900pF. Cost): 90pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High Speed Switching. Id(imp): 12A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 60 ns. Technology: V-MOS S-L. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Spec info: Samsung B4054-0018. G-S Protection: no. Quantity in stock updated on 16/04/2025, 07:25.
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