N-channel FETs and MOSFETs

N-channel transistor, 75V, 82A, 0.013 Ohms, TO-220, 75V. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 82A. On-resistance Rds On: 0.013 Ohms. Housing: TO-220. Drain-source voltage (Vds): 75V. Manufacturer's marking: IRF2807PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ 43A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 3820pF. Maximum dissipation Ptot [W]: 230W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 82A. Power: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 75V, 82A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 82A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F2807S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ 43A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 3820pF. Maximum dissipation Ptot [W]: 230W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 180A, 260A, 260A, 0.019 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 260A. On-resistance Rds On: 0.019 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Pd (Power Dissipation, Max): 290W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, 180A, 260A, 250uA, 0.019 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 180A. ID (T=25°C): 260A. Idss (max): 250uA. On-resistance Rds On: 0.019 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. C(in): 6320pF. Cost): 1980pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 1020A. IDss (min): 20uA. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 24 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 60.4k Ohms, 170A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 0.035 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 7500pF. Cost): 970pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 41 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 680A. IDss (min): 20uA. Marking on the case: IRF2907Z. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 60.4k Ohms, 180A, 180A, 0.03 Ohms, TO-220, TO-220AB ( AUIRF2907ZS-7PPBF ), 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 180A. Idss (max): 180A. On-resistance Rds On: 0.03 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( AUIRF2907ZS-7PPBF ). Voltage Vds(max): 75V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Pd (Power Dissipation, Max): 300W. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET

N-channel transistor, 80A, 110A, 250uA, 0.008 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 390A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 55V, 98A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 98A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF3205PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 3247pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 80A, 110A, 250nA, 0.008 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250nA. On-resistance Rds On: 0.008 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 390A. IDss (min): 25nA. Equivalents: IRF3205SPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 55V, 98A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 98A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F3205S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.008 Ohms @ 59A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 3247pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 75A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 4.9m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3450pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 440A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: AUTOMOTIVE MOSFET. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.0049 Ohm, TO-220AB, 55V. On-resistance Rds On: 0.0049 Ohm. Housing: TO-220AB. Drain-source voltage (Vds): 55V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 75A. Power: 170W

N-channel transistor, 19A, 27A, 250uA, 0.07 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 19A. ID (T=25°C): 27A. Idss (max): 250uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 1300pF. Cost): 300pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 174 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 108A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 136W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 30A, 43A, 250uA, 0.0042 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 30A. ID (T=25°C): 43A. Idss (max): 250uA. On-resistance Rds On: 0.0042 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 2400pF. Cost): 640pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 150A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 71 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 0.042 Ohms, TO-220, 150V. On-resistance Rds On: 0.042 Ohms. Housing: TO-220. Drain-source voltage (Vds): 150V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 43A. Power: 130W

N-channel transistor, 28A, 57A, 250uA, 23m Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 28A. ID (T=25°C): 57A. Idss (max): 250uA. On-resistance Rds On: 23m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 3230pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 100V, 57A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 57A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF3710PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 3130pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 40A, 57A, 250uA, 0.025 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. On-resistance Rds On: 0.025 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 3000pF. Cost): 640pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 100V, 57A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 57A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F3710S. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 28A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 3130pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 69A, 110A, 110A, 0.047 Ohms, TO-220, TO-220AB, 20V. ID (T=100°C): 69A. ID (T=25°C): 110A. Idss (max): 110A. On-resistance Rds On: 0.047 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 20V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Function: td(on) 12ns, td(off) 17ns

N-channel transistor, 69A, 110A, 100uA, 4.7M Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 20V. ID (T=100°C): 69A. ID (T=25°C): 110A. Idss (max): 100uA. On-resistance Rds On: 4.7M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 20V. C(in): 2980pF. Cost): 1770pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 48 ns. Type of transistor: MOSFET. Function: High Frequency Isolated DC-DC. Id(imp): 440A. IDss (min): 20uA. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no

N-channel transistor, 65A, 92A, 150uA, 0.0048 Ohm, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 20V. ID (T=100°C): 65A. ID (T=25°C): 92A. Idss (max): 150uA. On-resistance Rds On: 0.0048 Ohm. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 20V. C(in): 2150pF. Cost): 680pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Function: High Frequency Synchronous Buck. Id(imp): 380A. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.45V. Vgs(th) min.: 1.55V. G-S Protection: no

N-channel transistor, 97A, 140A, 250uA, 0.0059 Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 97A. ID (T=25°C): 140A. Idss (max): 250uA. On-resistance Rds On: 0.0059 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 5310pF. Cost): 890pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 550A. IDss (min): 20uA. Marking on the case: IRF3808. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 7.75A, 12A, 250uA, 0.4 Ohms, TO-3 ( TO-204 ), TO-3 ( TO-204A ), 500V. ID (T=100°C): 7.75A. ID (T=25°C): 12A. Idss (max): 250uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204A ). Voltage Vds(max): 500V. C(in): 2700pF. Cost): 600pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 1600 ns. Type of transistor: MOSFET. Function: Repetitive Avalanche Ratings. Id(imp): 48A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 35 ns. Technology: HEXFET Power MOSFET transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

N-channel transistor, 4A, 5.6A, 250uA, 0.54 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 4A. ID (T=25°C): 5.6A. Idss (max): 250uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 180pF. Cost): 81pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 20A. IDss (min): 25uA. Pd (Power Dissipation, Max): 43W. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no