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N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V - IRF3205Z

N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V - IRF3205Z
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Quantity excl. VAT VAT incl.
1 - 4 2.56$ 2.56$
5 - 9 2.43$ 2.43$
10 - 24 2.30$ 2.30$
25 - 49 2.17$ 2.17$
50 - 99 2.12$ 2.12$
100 - 249 1.95$ 1.95$
250 - 306 1.86$ 1.86$
Quantity U.P
1 - 4 2.56$ 2.56$
5 - 9 2.43$ 2.43$
10 - 24 2.30$ 2.30$
25 - 49 2.17$ 2.17$
50 - 99 2.12$ 2.12$
100 - 249 1.95$ 1.95$
250 - 306 1.86$ 1.86$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 306
Set of 1

N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V - IRF3205Z. N-channel transistor, 75A, 110A, 250uA, 4.9m Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 75A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 4.9m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3450pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 440A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: AUTOMOTIVE MOSFET. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.

Equivalent products :

Quantity in stock : 77
STP80NF70

STP80NF70

N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V. ID (T=100°C): 68A. ID (T=25...
STP80NF70
N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. On-resistance Rds On: 0.0098 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 68V. C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 392A. IDss (min): 1uA. Marking on the case: 80NF70. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STP80NF70
N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. On-resistance Rds On: 0.0098 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 68V. C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 392A. IDss (min): 1uA. Marking on the case: 80NF70. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
4.80$ VAT incl.
(4.80$ excl. VAT)
4.80$

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