Quantity | excl. VAT | VAT incl. |
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1 - 4 | 3.58$ | 3.58$ |
5 - 9 | 2.29$ | 2.29$ |
10 - 10 | 2.05$ | 2.05$ |
Quantity | U.P | |
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1 - 4 | 3.58$ | 3.58$ |
5 - 9 | 2.29$ | 2.29$ |
10 - 10 | 2.05$ | 2.05$ |
IRF3710Z. ROHS: Yes. Housing: TO220, TO220AB. Power: 160W. Assembly/installation: THT. Type of transistor: N-MOSFET, HEXFET. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: 100V. Drain current: 59A. On-state resistance: 18m Ohms. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 920mK/W. Charge: 82nC. Conditioning: tubus. Original product from manufacturer Infineon (irf). Quantity in stock updated on 04/09/2025, 04:56.
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