N-channel transistor, 100V, 5.6A, 0.54 Ohms, TO-220, 100V - IRF510PBF

Quantity	excl. VAT	VAT incl.
1 - 4	0.91$	0.91$
5 - 9	0.87$	0.87$
10 - 24	0.82$	0.82$
25 - 49	0.78$	0.78$
50 - 99	0.76$	0.76$
100 - 249	0.74$	0.74$
250 - 650	0.76$	0.76$

Quantity	U.P
1 - 4	0.91$	0.91$
5 - 9	0.87$	0.87$
10 - 24	0.82$	0.82$
25 - 49	0.78$	0.78$
50 - 99	0.76$	0.76$
100 - 249	0.74$	0.74$
250 - 650	0.76$	0.76$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 650

Set of 1

N-channel transistor, 100V, 5.6A, 0.54 Ohms, TO-220, 100V - IRF510PBF. N-channel transistor, 100V, 5.6A, 0.54 Ohms, TO-220, 100V. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 5.6A. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Drain-source voltage (Vds): 100V. Manufacturer's marking: IRF510PBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 3.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 43W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 5.6A. Power: 43W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Quantity in stock updated on 20/04/2025, 05:25.

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