N-channel transistor, TO-220AB, 100V, 9.7A, 0.20 Ohms, 100V - IRF520NPBF
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 0.93$ | 0.93$ |
| 5 - 9 | 0.89$ | 0.89$ |
| 10 - 24 | 0.84$ | 0.84$ |
| 25 - 49 | 0.79$ | 0.79$ |
| 50 - 99 | 0.77$ | 0.77$ |
| 100 - 249 | 0.76$ | 0.76$ |
| 250 - 803 | 0.89$ | 0.89$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 0.93$ | 0.93$ |
| 5 - 9 | 0.89$ | 0.89$ |
| 10 - 24 | 0.84$ | 0.84$ |
| 25 - 49 | 0.79$ | 0.79$ |
| 50 - 99 | 0.77$ | 0.77$ |
| 100 - 249 | 0.76$ | 0.76$ |
| 250 - 803 | 0.89$ | 0.89$ |
N-channel transistor, TO-220AB, 100V, 9.7A, 0.20 Ohms, 100V - IRF520NPBF. N-channel transistor, TO-220AB, 100V, 9.7A, 0.20 Ohms, 100V. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 9.7A. On-resistance Rds On: 0.20 Ohms. Drain-source voltage (Vds): 100V. Manufacturer's marking: IRF520NPBF. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.5 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 48W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 9.7A. Power: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Quantity in stock updated on 20/04/2025, 05:25.
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