Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.76$ | 3.76$ |
5 - 9 | 3.57$ | 3.57$ |
10 - 24 | 3.38$ | 3.38$ |
25 - 49 | 3.20$ | 3.20$ |
50 - 99 | 3.12$ | 3.12$ |
100 - 137 | 2.86$ | 2.86$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.76$ | 3.76$ |
5 - 9 | 3.57$ | 3.57$ |
10 - 24 | 3.38$ | 3.38$ |
25 - 49 | 3.20$ | 3.20$ |
50 - 99 | 3.12$ | 3.12$ |
100 - 137 | 2.86$ | 2.86$ |
N-channel transistor, 97A, 140A, 250uA, 0.0059 Ohms, TO-220, TO-220AB, 75V - IRF3808. N-channel transistor, 97A, 140A, 250uA, 0.0059 Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 97A. ID (T=25°C): 140A. Idss (max): 250uA. On-resistance Rds On: 0.0059 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 5310pF. Cost): 890pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 550A. IDss (min): 20uA. Marking on the case: IRF3808. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 68 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.
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