N-channel transistor, 60.4k Ohms, 170A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 75V - IRF2907Z

Quantity	excl. VAT	VAT incl.
1 - 4	4.45$	4.45$
5 - 9	4.22$	4.22$
10 - 24	4.00$	4.00$
25 - 49	3.78$	3.78$
50 - 99	3.69$	3.69$
100 - 101	3.47$	3.47$

Quantity	U.P
1 - 4	4.45$	4.45$
5 - 9	4.22$	4.22$
10 - 24	4.00$	4.00$
25 - 49	3.78$	3.78$
50 - 99	3.69$	3.69$
100 - 101	3.47$	3.47$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 101

Set of 1

N-channel transistor, 60.4k Ohms, 170A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 75V - IRF2907Z. N-channel transistor, 60.4k Ohms, 170A, 250uA, 0.035 Ohms, TO-220, TO-220AB, 75V. ID (T=100°C): 60.4k Ohms. ID (T=25°C): 170A. Idss (max): 250uA. On-resistance Rds On: 0.035 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 75V. C(in): 7500pF. Cost): 970pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 41 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 680A. IDss (min): 20uA. Marking on the case: IRF2907Z. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.

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