Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.33$ | 2.33$ |
5 - 9 | 2.22$ | 2.22$ |
10 - 24 | 2.10$ | 2.10$ |
25 - 49 | 1.98$ | 1.98$ |
50 - 54 | 1.94$ | 1.94$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.33$ | 2.33$ |
5 - 9 | 2.22$ | 2.22$ |
10 - 24 | 2.10$ | 2.10$ |
25 - 49 | 1.98$ | 1.98$ |
50 - 54 | 1.94$ | 1.94$ |
N-channel transistor, 30A, 43A, 250uA, 0.0042 Ohms, TO-220, TO-220AB, 150V - IRF3415. N-channel transistor, 30A, 43A, 250uA, 0.0042 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 30A. ID (T=25°C): 43A. Idss (max): 250uA. On-resistance Rds On: 0.0042 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 2400pF. Cost): 640pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 150A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 71 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.
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