Quantity | excl. VAT | VAT incl. |
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1 - 4 | 4.10$ | 4.10$ |
5 - 9 | 3.90$ | 3.90$ |
10 - 21 | 3.69$ | 3.69$ |
Quantity | U.P | |
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1 - 4 | 4.10$ | 4.10$ |
5 - 9 | 3.90$ | 3.90$ |
10 - 21 | 3.69$ | 3.69$ |
N-channel transistor, 49.5A, 70A, 10uA, 0.019 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 100V - FQA70N10. N-channel transistor, 49.5A, 70A, 10uA, 0.019 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 100V. ID (T=100°C): 49.5A. ID (T=25°C): 70A. Idss (max): 10uA. On-resistance Rds On: 0.019 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 100V. C(in): 2500pF. Cost): 720pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 280A. IDss (min): 1uA. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 30 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Low gate charge (typical 85nC). G-S Protection: no. Quantity in stock updated on 19/04/2025, 18:25.
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