N-channel FETs and MOSFETs

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 6A/6A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6A/6A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6912. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms/0.028 Ohms @ 6A/6A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 740pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 30A, 8.5A, 250uA, 19m Ohms, SO, SO-8, 30 v. ID (T=100°C): 30A. ID (T=25°C): 8.5A. Idss (max): 250uA. On-resistance Rds On: 19m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 475pF. Cost): 100pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 40A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.2V

N-channel transistor, 5.4A, SO, SO-8. ID (T=100°C): 5.4A. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Drain-source protection : yes. Quantity per case: 2. Trr Diode (Min.): 15 ns. Function: Rds-on 0.030 Ohms. G-S Protection: no. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 0.22A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.22A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 301. Drain current through resistor Rds [Ohm] @ Ids [A]: 4 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 301. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 8 ns. Ciss Gate Capacitance [pF]: 9.5pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), SOT-23, 25V, 0.68A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.68A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 303. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.44 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 1V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 650V. C(in): 2915pF. Cost): 270pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 47ms. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. Germanium diode: no. Collector current: 60.4k Ohms. Ic(pulse): 180A. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 20A, D2PAK ( TO-263 ), D2-PAK, 600V. Ic(T=100°C): 20A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2-PAK. Collector/emitter voltage Vceo: 600V. C(in): 940pF. Cost): 110pF. CE diode: no. Channel type: N. Function: solar inverter, UPS, welding machine, PFC. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Note: N-channel MOS IGBT transistor. Marking on the case: FGB20N60SF. Number of terminals: 2. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 12 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2110pF. Cost): 200pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 80A. Ic(pulse): 60.4k Ohms. Marking on the case: FGH40N60SFD. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 115 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 1880pF. Cost): 180pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 70 ns. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. Germanium diode: no. Collector current: 80A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 349W. RoHS: yes. Spec info: Ic 80A @ 25°C, 40A @ 110°C, Icm 120A (pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 12 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 40A, TO-247, TO-247AB, 600V. Ic(T=100°C): 40A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2110pF. Cost): 200pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 80A. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 24 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 47 ns. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SFD. Number of terminals: 3. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SF. Number of terminals: 3. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V

N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2915pF. Cost): 270pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: Induction Heating, UPS, SMPS, PFC. Germanium diode: no. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SMD. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 18 ns. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V

N-channel transistor, 25A, Other, Other, 1200V. Ic(T=100°C): 25A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 1.45pF. CE diode: yes. Channel type: N. Function: ICRM--50A Tp=1mS, Tc=25°C. Germanium diode: no. Collector current: 39A. Ic(pulse): 50A. Note: 7x IGBT+ CE Diode. Number of terminals: 33dB. Dimensions: 56.7x48x12mm. Pd (Power Dissipation, Max): 175W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.46 ns. Td(on): 0.08 ns. Technology: IGBT Hybrid module. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.2V. Gate/emitter voltage VGE(th)max.: 6.4V

N-channel transistor, 6.32A, 10A, 100uA, 0.93 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.93 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 40A. IDss (min): 10uA. Marking on the case: FQA10N80C. Number of terminals: 3. Pd (Power Dissipation, Max): 240W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-3PN, 900V, 11A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA11N90C_F109. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.1 Ohms @ 5.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 270 ns. Ciss Gate Capacitance [pF]: 3290pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering, TO-3PN, 900V, 11.4A. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 900V. Drain Current Id [A] @ 25°C: 11.4A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA 11N90. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.96 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 140 ns. Switch-off delay tf[nsec.]: 340 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9.5A, 15A, 10uA, 0.43 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 9.5A. ID (T=25°C): 15A. Idss (max): 10uA. On-resistance Rds On: 0.43 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 43nC). G-S Protection: no. Id(imp): 60A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 218W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-3PN, 800V, 12.6A, 1, TO-3PN ( 2-16C1B ), TO-3PN, 800V. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 12.6A. Housing (JEDEC standard): 1. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA13N80. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 320 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 11.7A, 18.5A, 100uA, 0.3 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 11.7A. ID (T=25°C): 18.5A. Idss (max): 100uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 2800pF. Cost): 350pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 74A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 65 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 12.5A, 24A, 10uA, 0.156 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 500V. ID (T=100°C): 12.5A. ID (T=25°C): 24A. Idss (max): 10uA. On-resistance Rds On: 0.156 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 500V. C(in): 3500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Id(imp): 96A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 80 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 14.9A, 23.5A, 100uA, 0.18 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 600V. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 600V. C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Id(imp): 94A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 23.3A, 33A, 10uA, 0.067 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 150V. ID (T=100°C): 23.3A. ID (T=25°C): 33A. Idss (max): 10uA. On-resistance Rds On: 0.067 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 150V. C(in): 1250pF. Cost): 260pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 40nC). G-S Protection: no. Id(imp): 132A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 227W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 17 ns. Technology: DMOS Technology. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 39A, 62A, 100uA, 0.029 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 250V. ID (T=100°C): 39A. ID (T=25°C): 62A. Idss (max): 100uA. On-resistance Rds On: 0.029 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 4830pF. Cost): 945pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 248A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 245 ns. Td(on): 75 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V