N-channel FETs and MOSFETs

N-channel transistor, PCB soldering, TO-3P, 500V, 48A. Housing: PCB soldering. Housing: TO-3P. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 48A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FDA50N50. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 220 ns. Switch-off delay tf[nsec.]: 460 ns. Ciss Gate Capacitance [pF]: 6460pF. Maximum dissipation Ptot [W]: 625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 35A, 59A, 10uA, 0.041 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3PN, 250V. ID (T=100°C): 35A. ID (T=25°C): 59A. Idss (max): 10uA. On-resistance Rds On: 0.041 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 3090pF. Cost): 630pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP TV, AC/DC Converter. G-S Protection: no. Id(imp): 236A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 392W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 70 ns. Technology: UniFET MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, 44.2A, 69A, 10uA, 0.034 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3PN, 250V. ID (T=100°C): 44.2A. ID (T=25°C): 69A. Idss (max): 10uA. On-resistance Rds On: 0.034 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 3570pF. Cost): 750pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: PDP TV, AC/DC Converter. G-S Protection: no. Id(imp): 276A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 480W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 95 ns. Technology: UniFET MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 50A, 1uA, 0.0087 Ohms, D2PAK ( TO-263 ), TO-263AB, 40V. ID (T=25°C): 50A. Idss (max): 1uA. On-resistance Rds On: 0.0087 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Voltage Vds(max): 40V. C(in): 1970pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SUPERSOT-6, 8V, 1.5A/1.5A. Housing: PCB soldering (SMD). Housing: SUPERSOT-6. Drain-source voltage Uds [V]: 8V. Drain Current Id [A] @ 25°C: 1.5A/1.5A. RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 6. Gate breakdown voltage Ugs [V]: 3V. Maximum dissipation Ptot [W]: 0.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 30A, 0.023 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 30A. On-resistance Rds On: 0.023 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FDD5690. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 1110pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 50A, 1uA, 0.0088 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 50A. Idss (max): 1uA. On-resistance Rds On: 0.0088 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 100A. Number of terminals: 2. Pd (Power Dissipation, Max): 52W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V

N-channel transistor, 15A, 59A, 59A, 0.016 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=100°C): 15A. ID (T=25°C): 59A. Idss (max): 59A. On-resistance Rds On: 0.016 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 1400pF. Cost): 317pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 100A. Marking on the case: FDD6635. Number of terminals: 2. Pd (Power Dissipation, Max): 55W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 50A, 65A, 1uA, 8.2M Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 65A. Idss (max): 1uA. On-resistance Rds On: 8.2M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 5070pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. Id(imp): 100A. Note: Logic level gated transistor. Number of terminals: 2. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 69 ns. Td(on): 17 ns. Technology: Power Trench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2V. Vgs(th) min.: 0.8V

N-channel transistor, 11.4A, 18A, 500uA, 61m Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 150V. ID (T=100°C): 11.4A. ID (T=25°C): 18A. Idss (max): 500uA. On-resistance Rds On: 61m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 150V. C(in): 575pF. Cost): 64pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 56.4 ns. Type of transistor: MOSFET. Function: Vitesse de commutation rapide, faible charge de grille. G-S Protection: no. Id(imp): 36A. IDss (min): 1uA. Note: High performance trench technology. Number of terminals: 2. Pd (Power Dissipation, Max): 56.8W. RoHS: yes. Spec info: extremely low RDS(on) resistance. Assembly/installation: surface-mounted component (SMD). Td(off): 15.8 ns. Td(on): 10.3 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 15.2A, 57A, 1uA, 0.085 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=100°C): 15.2A. ID (T=25°C): 57A. Idss (max): 1uA. On-resistance Rds On: 0.085 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 1970pF. Cost): 250pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 22 ns. Type of transistor: MOSFET. Function: Fast Switching, inverters, Power Supplies. G-S Protection: no. Id(imp): 100A. IDss (min): 1uA. Marking on the case: FDD8447L. Number of terminals: 3. Pd (Power Dissipation, Max): 44W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 12 ns. Technology: Power Trench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, 11A, 40A, 250uA, 0.011 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 11A. ID (T=25°C): 40A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 880pF. Cost): 195pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 23 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. G-S Protection: no. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 7 ns. Technology: Power Trench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.2V

N-channel transistor, 57A, 80A, 250uA, 0.009 Ohms, TO-247, TO-247-3, 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 0.009 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247-3. Voltage Vds(max): 100V. C(in): 6000pF. Cost): 820pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter and UPS inverters. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 30 ns. Technology: N-Channel PowerTrench® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, PCB soldering, TO-247, 500V, 45A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 45A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FDH45N50F. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.12 Ohms @ 22.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 140 ns. Switch-off delay tf[nsec.]: 215 ns. Ciss Gate Capacitance [pF]: 6630pF. Maximum dissipation Ptot [W]: 625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 7.5A, 7.5A, SMD, Power-56-8, 30 v. ID (T=25°C): 7.5A. Idss (max): 7.5A. Housing: SMD. Housing (according to data sheet): Power-56-8. Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 2. Type of transistor: MOSFET. Function: 7.5A, Rds-on 0.013 Ohms (Q1). Number of terminals: 8. RoHS: yes. Spec info: 7.5A, Rds-on 0.0215 Ohms (Q2). Assembly/installation: surface-mounted component (SMD). Technology: dual N-channel MOSFET transistor. 30V. 'PowerTrench MOSFET'

N-channel transistor, 10.8A, 18A, 10uA, 0.22 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 10.8A. ID (T=25°C): 18A. Idss (max): 10uA. On-resistance Rds On: 0.22 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. C(in): 2200pF. Cost): 330pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 72A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. RoHS: yes. Spec info: Faible charge de grille (45nC typique). Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 55 ns. Technology: N-Channel MOSFET (UniFET). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 56A, 79A, 250uA, 0.016 Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 56A. ID (T=25°C): 79A. Idss (max): 250uA. On-resistance Rds On: 0.016 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 5870pF. Cost): 615pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter and UPS inverters. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 16 ns. Technology: N-Channel PowerTrench® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 57A, 80A, 250uA, 0.009 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 0.009 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 6000pF. Cost): 820pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter and UPS inverters. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 30 ns. Technology: N-Channel PowerTrench® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 43A, 61A, 250uA, 0.014 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 43A. ID (T=25°C): 61A. Idss (max): 250uA. On-resistance Rds On: 0.014 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 2880pF. Cost): 3990pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 62 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter and UPS inverters. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 12 ns. Technology: N-Channel PowerTrench® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 6.9A, 11.5A, 10uA, 0.46 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 6.9A. ID (T=25°C): 11.5A. Idss (max): 10uA. On-resistance Rds On: 0.46 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 945pF. Cost): 155pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: yes. Id(imp): 46A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. RoHS: yes. Spec info: Low gate charge (typical 23nC), Low Crss 14pF. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 20 ns. Technology: UniFET TM II MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 3A, 5A, 10uA, 1.15 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 10uA. On-resistance Rds On: 1.15 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 480pF. Cost): 66pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 20A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 28W. RoHS: yes. Spec info: Low gate charge (typical 11nC), Low Crss 5pF. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 13 ns. Technology: UniFET MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 3A, 5A, 250uA, 1.2 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 720pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 20A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.5W. RoHS: yes. Spec info: Low gate charge (typical 12nC), Low Crss 9pF. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: UniFET Ultra FRMOS MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 13A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6670A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 2220pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 11A, 10uA, 9.8m Ohms, SO, SO-8, 30 v. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 9.8m Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 1205pF. Cost): 290pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: logic level control. G-S Protection: no. Id(imp): 50A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 9 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V

N-channel transistor, PCB soldering (SMD), SO8, 30 v, 8.2A/6.9A, 8.2A. Housing: PCB soldering (SMD). Housing: SO8. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 8.2A/6.9A. Housing (JEDEC standard): 8.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6900AS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms / 0.038 Ohms @ 8.2/6.9A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 570pF/600pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C