Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 8.28$ | 8.28$ |
2 - 2 | 7.87$ | 7.87$ |
3 - 4 | 7.45$ | 7.45$ |
5 - 9 | 7.04$ | 7.04$ |
10 - 19 | 6.87$ | 6.87$ |
20 - 29 | 6.71$ | 6.71$ |
30 - 49 | 6.46$ | 6.46$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 8.28$ | 8.28$ |
2 - 2 | 7.87$ | 7.87$ |
3 - 4 | 7.45$ | 7.45$ |
5 - 9 | 7.04$ | 7.04$ |
10 - 19 | 6.87$ | 6.87$ |
20 - 29 | 6.71$ | 6.71$ |
30 - 49 | 6.46$ | 6.46$ |
N-channel transistor, 39A, 62A, 100uA, 0.029 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 250V - FQA62N25C. N-channel transistor, 39A, 62A, 100uA, 0.029 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 250V. ID (T=100°C): 39A. ID (T=25°C): 62A. Idss (max): 100uA. On-resistance Rds On: 0.029 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 250V. C(in): 4830pF. Cost): 945pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Id(imp): 248A. IDss (min): 10uA. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 245 ns. Td(on): 75 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Quantity in stock updated on 19/04/2025, 18:25.
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