N-channel transistor, 60A, 85A, 10uA, 0.008 Ohms, TO-220, TO-220, 60V - FQP85N06

N-channel transistor, 60A, 85A, 10uA, 0.008 Ohms, TO-220, TO-220, 60V - FQP85N06. N-channel transistor, 60A, 85A, 10uA, 0.008 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 10uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 3170pF. Cost): 1150pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 300A. IDss (min): 1uA. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 40 ns. Technology: DMOS, QFET® MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no. Quantity in stock updated on 19/04/2025, 18:25.