IGBT transistors

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 34A. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 68A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30UD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 23A. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 91 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 92A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC30U. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 23A. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 91 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 92A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC40K. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 25A. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 140 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 84A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC40S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 60A. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 650 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 60.4k Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC40U. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 34 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 160A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC30FD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 31A. Switch-on time ton [nsec.]: 42 ns. Switch-off delay tf[nsec.]: 230 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 60.4k Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC30KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 28A. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 160 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 58A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC30S. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 34A. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 540 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 68A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC30UD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 23A. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 91 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 100W. Maximum collector current (A): 92A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC40KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 42A. Switch-on time ton [nsec.]: 53 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 84A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC40K. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 42A. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 140 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 84A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC40UD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 54 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 160A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC40W. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 27 ns. Switch-off delay tf[nsec.]: 100 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 160A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC50FD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 70A. Switch-on time ton [nsec.]: 55 ns. Switch-off delay tf[nsec.]: 240 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 200W. Maximum collector current (A): 280A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC50F. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 70A. Switch-on time ton [nsec.]: 31 ns. Switch-off delay tf[nsec.]: 240 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 200W. Maximum collector current (A): 280A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PC50KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 52A. Switch-on time ton [nsec.]: 63 ns. Switch-off delay tf[nsec.]: 150 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 200W. Maximum collector current (A): 104A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PF50W. Collector-emitter voltage Uce [V]: 900V. Collector current Ic [A]: 51A. Switch-on time ton [nsec.]: 29 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 200W. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 29 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.25V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 900V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Maximum collector current (A): 204A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PH20KD. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 11A. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 100 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 60W. Maximum collector current (A): 22A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PH40K. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 30A. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 200 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 60A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PH40UD. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 41A. Switch-on time ton [nsec.]: 46 ns. Switch-off delay tf[nsec.]: 90 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 160W. Maximum collector current (A): 82A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. C(in): 825pF. Cost): 150pF. Channel type: N. Conditioning: plastic tube. Collector current: 20A. Ic(T=100°C): 14A. Marking on the case: GB14C40L. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8.3 ns. Td(on): 1.35 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 1.3V. Gate/emitter voltage VGE(th)max.: 2.2V. Number of terminals: 3. Note: > 6KV ESD Gate Protection. Note: integrated resistors R1 G (75 Ohms), R2 GE (20k Ohms). Conditioning unit: 50. Spec info: IGBT with on-chip Gate-Emitter and Gate-Collector. CE diode: no. Germanium diode: yes

IGBT transistor. C(in): 3025pF. Cost): 245pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Collector current: 90A. Ic(pulse): 144A. Ic(T=100°C): 48A. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 145 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.65V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 4 v. Number of terminals: 3. CE diode: yes. Germanium diode: no

IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AD. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 39N60BD1. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 76A. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 500 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 200W. Maximum collector current (A): 152A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

IGBT transistor. C(in): 760pF. Cost): 220pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: Extreme Light Punch Through, IGBT for 10-30kHz Switching. Collector current: 480A. Ic(pulse): 1200A. Ic(T=100°C): 200A. Number of terminals: 3. Pd (Power Dissipation, Max): 1630W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 226 ns. Td(on): 45 ns. Technology: XPT™ 900V IGBT, GenX4™. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.7V. Collector/emitter voltage Vceo: 650V. Gate/emitter voltage VGE: VGES 20V, VGEM 30V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Spec info: ICM TC=25°C, 1ms, 1200A. CE diode: no. Germanium diode: no